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| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥494.21 (¥543.631) |
| 10+ | ¥403.47 (¥443.817) |
| 25+ | ¥401.19 (¥441.309) |
| 50+ | ¥398.9 (¥438.79) |
| 100+ | ¥396.62 (¥436.282) |
| 250+ | ¥394.33 (¥433.763) |
| 500+ | ¥392.05 (¥431.255) |
| 1000+ | ¥389.76 (¥428.736) |
製品概要
STGAP2SICSNTR is a galvanically isolated 4A single gate driver for SiC MOSFETs. It provides galvanic isolation between the gate driving channel and the low-voltage control and interface circuitry. The gate driver is characterized by 4 A capability and rail-to-rail outputs, making the device also suitable for mid and high-power applications such as power conversion and motor driver inverters in industrial applications. The configuration with separated output pins allows to independently optimize turn-on and turn-off by using dedicated gate resistors. Typical applications are motor drivers for home appliances, factory automation, industrial drives, and fans, 600/1200V inverters, battery chargers, induction heating, welding, UPS, power supply units, DC-DC converters, and power factor correction.
- Driver current capability: 4A sink/source at 25°C
- dV/dt transient immunity ±100V/ns in full temperature range
- Overall input-output propagation delay is 75ns
- UVLO function, gate driving voltage up to 26V
- Temperature shut-down protection, standby function
- 4.8kVPK isolation, UL 1577 recognized
- Maximum switching frequency is 1MHz
- Common-mode transient immunity, dVISO/dt is 100V/ns minimum (VCM = 1500V)
- GON-GOFF output configuration, SO-8 package
- Operating junction temperature range from -40 to 125°C
技術仕様
1チャネル
絶縁
8ピン
表面実装
4A
3.1V
-50°C
75ns
-
0
絶縁
SiC MOSFET
SOIC
-
4A
5.5V
150°C
75ns
-
0
法律および環境情報
最後に重要な製造工程が行われた国生産国:Malaysia
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書