さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥484.36 (¥532.796) |
| 10+ | ¥352.69 (¥387.959) |
| 100+ | ¥285.29 (¥313.819) |
| 500+ | ¥253.94 (¥279.334) |
| 1000+ | ¥211.64 (¥232.804) |
製品情報
製品概要
The CoolSiC™ generation G6 is the leading edge technology from Infineon for the SiC Schottky barrier diodes. The G6 is an advancement of Infineon's G5 technology with the introduction of a novel Schottky metal system. The CoolSiC™ Schottky diode G6 has been designed to complement our 600V and 650V CoolMOS™ 7 families, meeting the most stringent application requirements in this voltage range. Offering key benefits such as System cost and size savings due to the reduced cooling requirements as well as enabling higher frequency and increased power density.
注意事項
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術仕様
CoolSiC 6G 650V
650V
12.2nC
10 ピン
表面実装
0
シングル
24A
HDSOP
175°C
-
技術文書 (1)
法律および環境情報
最後に重要な製造工程が行われた国生産国:Malaysia
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書