さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥378.08 (¥415.888) |
| 10+ | ¥368.18 (¥404.998) |
| 25+ | ¥358.28 (¥394.108) |
| 50+ | ¥348.37 (¥383.207) |
| 100+ | ¥338.47 (¥372.317) |
| 250+ | ¥328.56 (¥361.416) |
| 500+ | ¥318.66 (¥350.526) |
| 1000+ | ¥313.18 (¥344.498) |
製品概要
The LF398N/NOPB is a monolithic Sample-and-Hold Circuit uses BI-FET technology to obtain ultrahigh DC accuracy with fast acquisition of signal and low droop rate. Operating as unity-gain follower, DC gain accuracy is 0.002% typical and acquisition time is as low as 6µs to 0.01%. A bipolar input stage is used to achieve low offset voltage and wide bandwidth. Input offset adjust is accomplished with a single pin and does not degrade input offset drift. The wide bandwidth allows the LF198-N to be included inside the feedback loop of 1MHz operational amplifiers without having stability problems. Input impedance of 10¹⁰Ω allows high-source impedances to be used without degrading accuracy. P-channel junction FETs are combined with bipolar devices in the output amplifier to give droop rates as low as 5mV/minute with a 1µF hold capacitor. The JFETs have much lower noise than MOS devices used in previous designs and do not exhibit high temperature instabilities.
- Low input offset
- Low output noise in hold mode
- Input characteristics do not change during hold mode
- High supply rejection ratio in sample or hold
- Wide bandwidth
- Logic input compatible with TTL, PMOS and CMOS
- 0.5mV Typical hold step at 0.01µF
- 0.002% Gain accuracy
- 500mW Power dissipation
- ±15V Supply voltage
注意事項
Device has limited built-in ESD protection. The leads should be shorted together or the device placed in conductive foam during storage or handling to prevent electrostatic damage to the MOS gates.
技術仕様
1 アンプ
20µs
DIP
± 5V ~ ± 18V
0°C
-
0
1MHz
2mV
8ピン
-
70°C
0
技術文書 (1)
法律および環境情報
最後に重要な製造工程が行われた国生産国:United States
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書