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| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥494.21 (¥543.631) |
| 10+ | ¥338.66 (¥372.526) |
| 50+ | ¥321.65 (¥353.815) |
| 100+ | ¥304.63 (¥335.093) |
| 250+ | ¥288.43 (¥317.273) |
| 500+ | ¥278.7 (¥306.57) |
| 1000+ | ¥277.09 (¥304.799) |
| 2500+ | ¥260.89 (¥286.979) |
製品概要
STGAP2GSNCTR is an isolated 3A single gate driver for enhancement mode GaN FETs. It provides isolation between the gate driving channel and the low voltage control and interface circuitry. The gate driver is characterized by 2A source and 3A sink capability and rail-to-rail outputs, making the device also suitable for mid and high power applications such as power conversion and motor driver inverters in industrial applications. The device allows to independently optimize turn-on and turn-off by using dedicated gate resistors. The device integrates protection functions including thermal shutdown and UVLO with an optimized level for enhancement-mode GaN FETs, which enables easy design high efficiency and reliable systems. Typical applications are motor driver for home appliances, factory automation, industrial drives and fans, 600/1200V inverters, wireless chargers, UPS, power supply units, DC-DC converters, and power factor corrections.
- Driver current capability is 2A / 3A source/sink at 25°C, VH = 6V
- dV/dt transient immunity is ±100V/ns
- Input-output propagation delay is 45ns, gate driving voltage up to 15V
- Separate sink and source option for easy gate driving configuration
- UVLO function optimized for GaN
- 3.3V, 5V TTL/CMOS inputs with hysteresis
- Temperature shut-down protection, standby function
- Standby VDD quiescent supply current is 65µA max (TJ = 25°C, VH = 6V, VDD = 5V)
- SO-8 package
- Operating junction temperature range from -40 to 125°C
技術仕様
1チャネル
ハーフブリッジ
8ピン
表面実装
2A
3.1V
-40°C
45ns
-
0
絶縁
MOSFET
SOIC
CMOS, TTL
3A
5.5V
125°C
45ns
-
法律および環境情報
最後に重要な製造工程が行われた国生産国:Taiwan
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書