さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥933.32 (¥1,026.652) |
| 10+ | ¥716.2 (¥787.82) |
| 25+ | ¥708.99 (¥779.889) |
| 50+ | ¥701.77 (¥771.947) |
| 100+ | ¥694.55 (¥764.005) |
| 250+ | ¥687.33 (¥756.063) |
| 500+ | ¥680.11 (¥748.121) |
製品概要
MASTERGAN4LTR is a 600V half-bridge enhancement-mode GaN HEMT with a high-voltage driver. It is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN transistors in a half‑bridge configuration. It features UVLO protection on VCC, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with analogue controllers, microcontrollers, and DSP units. Typical applications are high-frequency resonant converters including LLC, LCC and resonant flyback, active clamp flybacks, switch-mode power supplies, chargers and adapters, PFC, high-voltage DC-DC and DC-AC converters.
- Reverse current capability, zero reverse recovery loss
- UVLO protection on VCC, internal bootstrap diode
- Interlocking function, dedicated pin for shutdown functionality
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Overtemperature protection, bill of material reduction
- Very compact and simplified layout, flexible, easy, and fast design
- QFN package
- Industrial temperature range from -40°C to 125°C
- Output capacitance is 14.2pF (VGS = 0V, VDS = 400V)
技術仕様
1チャネル
ハーフブリッジ
31ピン
表面実装
-
4.75V
-40°C
-
-
0
-
GaN HEMT
QFN-EP
非反転
-
9.5V
125°C
-
-
技術文書 (1)
法律および環境情報
最後に重要な製造工程が行われた国生産国:Thailand
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書