さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥332.18 (¥365.398) |
| 10+ | ¥260.89 (¥286.979) |
| 50+ | ¥254.41 (¥279.851) |
| 100+ | ¥247.92 (¥272.712) |
| 250+ | ¥231.72 (¥254.892) |
| 500+ | ¥225.24 (¥247.764) |
| 1000+ | ¥222.48 (¥244.728) |
| 2500+ | ¥219.72 (¥241.692) |
製品情報
製品概要
The L6387ED is a simple and compact high voltage Gate Driver manufactured with the BCD™ offline technology and able to drive a half-bridge of power MOS or IGBT device. The high-side (floating) section is enabled to work with voltage rail up to 600V. Both device outputs can independently sink and source 650 and 400mA respectively and cannot be simultaneously driven high thanks to an integrated interlocking function. The L6387E device provides two input pins and two output pins and guarantees the outputs toggle in phase with inputs. The logic inputs are CMOS/TTL compatible to ease the interfacing with controlling devices. The L6387E features the UVLO protection on the VCC supply voltage and integrates the bootstrap diode, allowing a more compact and reliable solution.
- CMOS/TTL Schmitt-trigger inputs with hysteresis and pull-down
- Internal bootstrap diode structure
- Outputs in phase with inputs
- Interlocking function
- dV/dt immunity of ±50V/ns in full temperature range
- 50/30ns Rise/fall with 1nF load switching time
注意事項
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術仕様
2チャネル
ハイサイド および ローサイド
8ピン
表面実装
400mA
5.5V
-45°C
110ns
-
0
-
IGBT, MOSFET
SOIC
反転
650mA
17V
125°C
105ns
-
0
関連製品
1 見つかった製品
法律および環境情報
最後に重要な製造工程が行われた国生産国:Malaysia
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書