S29GL01GT10TFI010

S29GL01GT10TFI010 is a 1Gb (128MB), parallel 3.0V, GL-T MIRRORBIT™ flash memory. This device offers a fast page access time as fast as 15ns, with a corresponding random access time as fast as 100ns. It features a write buffer that allows a maximum of 256 words/512 bytes to be programmed in one operation, resulting in faster effective programming time than standard programming algorithms. It makes this device ideal for today’s embedded applications that require higher density, better performance, and lower power consumption.

• 100ns random access time speed, fabricated on 45nm process technology
• VIO=VCC=2.7V to 3.6V, highest address sector protected CFI Version 1.5
• Single supply (VCC) for read / program / erase (2.7V to 3.6V)
• Versatile I/O feature - wide I/O voltage range (VIO) 1.65V to VCC
• ×8/×16 data bus, asynchronous 32-byte page read
• Automatic error checking and correction (ECC) internal hardware ECC with single bit error correction
• Suspend and resume commands for program and erase operations
• Status register, data polling, and ready/busy pin methods to determine device status
• 100,000 program/erase cycles, 20-year data retention
• TSOP package, industrial temperature range from -40°C to +85°C