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| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥454.95 (¥500.445) |
| 10+ | ¥364.58 (¥401.038) |
| 25+ | ¥345.88 (¥380.468) |
| 50+ | ¥334.2 (¥367.62) |
| 100+ | ¥322.51 (¥354.761) |
| 250+ | ¥319.4 (¥351.34) |
| 500+ | ¥314.72 (¥346.192) |
| 1000+ | ¥314.16 (¥345.576) |
製品情報
製品概要
The IR2113PBF is a high voltage high speed power MOSFET and IGBT Driver with independent high and low-side referenced output channels. Proprietary HVIC and latch immune CMOS technology enables ruggedized monolithic construction. Logic inputs are compatible with standard CMOS or LSTTL output and down to 3.3V logic. The output driver features a high pulse current buffer stage designed for minimum driver cross-conduction. Propagation delays are matched to simplify use in high frequency applications. The floating channel can be used to drive a N-channel power MOSFET or IGBT in the high-side configuration which operates up to 500 or 600V.
- Tolerant to negative transient voltage DV/DT Immune
- Under-voltage lockout for both channels
- CMOS Schmitt-triggered inputs with pull-down
- Cycle-by-cycle edge-triggered shutdown logic
- Matched propagation delay for both channels
- Outputs in phase with inputs
技術仕様
2チャネル
ハイサイド および ローサイド
14ピン
スルーホール
2A
10V
-40°C
120ns
-
0
-
IGBT, MOSFET
DIP
非反転
2A
20V
125°C
94ns
-
0
関連製品
3 見つかった製品
法律および環境情報
最後に重要な製造工程が行われた国生産国:Malaysia
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書