さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥663.4 (¥729.74) |
| 10+ | ¥583.26 (¥641.586) |
| 25+ | ¥546.53 (¥601.183) |
| 100+ | ¥490.87 (¥539.957) |
| 300+ | ¥469.72 (¥516.692) |
| 500+ | ¥428.54 (¥471.394) |
| 1000+ | ¥396.69 (¥436.359) |
| 2500+ | ¥380.76 (¥418.836) |
製品情報
製品概要
Single-channel isolated gate driver with ultra-high common-mode transient immunity (CMTI) of 300KV/μs (typ). The devices is designed to drive silicon-carbide (SiC) or gallium-nitride (GaN) transistors in various inverter or motor control applications with different output gate-drive circuitry and B-side supply voltages. It features variants with output options for adjustable undervoltage lockout UVLO. Devices has integrated digital galvanic isolation using Maxim’s proprietary process technology. Also features isolation for a withstand voltage rating of 3KVRMS (narrow SOIC package) for 60 seconds. It supports a minimum pulse width of 20ns with a maximum pulse width distortion of 2ns. The MAX22702 has a maximum RDSON of 1.25ohm for the low-side driver. It has a maximum RDSON of 4.5ohm for the high side driver. Applications include isolated gate driver for inverters, motor drives, UPS and PV Inverters.
- High CMTI (300KV/μs, typ)
- Robust galvanic isolation
- Withstands ±5KV surge between GNDA and VSSB with 1.2/50μs waveform
- Precision UVLO
- Differential input
注意
ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party
技術仕様
1チャネル
ハイサイド および ローサイド
8ピン
表面実装
-
3V
-40°C
35ns
-
0
絶縁
GaN HEMT, SiC MOSFET
NSOIC
反転, 非反転
-
5.5V
125°C
35ns
-
0
技術文書 (1)
法律および環境情報
最後に重要な製造工程が行われた国生産国:Philippines
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書