LTC4444EMS8E#PBF

LTC4444 is a high frequency high voltage gate driver that drives two N-channel MOSFETs in a synchronous DC/DC converter with supply voltages upto 100V. This powerful driver reduces switching losses in MOSFETs with high gate capacitance. It is configured for two supply-independent inputs. The high side input logic signal is internally level-shifted to the bootstrapped supply, which may function at upto 114V above ground. It contains undervoltage lockout circuits that disable the external MOSFETs when activated. Adaptive shoot-through protection prevents both MOSFETs from conducting simultaneously. It is widely used in application such as distributed power architectures, automotive power supplies, high density power modules, telecommunications etc.

• Bootstrap supply voltage to 114V, adaptive shoot-through protection
• Wide VCC voltage is 7.2V to 13.5V
• BG output rise time is 6ns typ, BG output fall time is 3ns typ
• TG peak pull-up current is 2.5A typical at (TA = 25°C, VCC = VBOOST = 12V)
• BG peak pull-up current is 3A typical at (TA = 25°C, VCC = VBOOST = 12V)
• TG pull-down resistance is 1.2 Ohm typical at (TA = 25°C, VCC = VBOOST = 12V)
• BG driver pull-down resistance is 0.55 Ohm typical at (TA = 25°C, VCC = VBOOST = 12V)
• Drives both high and low side N-channel MOSFETs, undervoltage lockout
• TG output rise time is 8ns typ, TG output fall time is 5ns typ
• Operating temperature is -40°C to 125°C, package style is 8-lead plastic MSOP

注意

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party