NTS4001NT1G

NTS4001NT1G is a single N-channel small signal MOSFET. This device is AEC-Q101 qualified and PPAP capable. It is used in applications such as low-side load switch, Li-ion battery-supplied devices, cell phones, PDAs, DSC, buck converters, and level shifts.

• Low gate charge for fast switching
• ESD protected gate
• 270mA continuous drain current
• 800mA pulse drain current
• Drain-to-source breakdown voltage is 30V minimum at (VGS = 0V, ID = 100µA)
• Gate-to-source leakage current is ±1µA maximum at (VDS = 0V, VGS = ±10V)
• Input capacitance is 20pF typical at (VGS = 0V, f = 1.0MHz, VDS = 5.0V)
• Turn-on delay time is 17ns typical at (VGS = 4.5V, VDD = 5V, ID = 10mA, RG = 50 ohm)
• Gate threshold temperature coefficient is -3.4mV/°C typical at ((TJ = 25°C)
• Junction temperature range from -55°C to 150°C, SC-70 package