FDN360P

The FDN360P is a surface mount, single P channel PowerTrench MOSFET in superSOT-23 package. PowerTrench process has been tailored to minimize the onstate resistance and maintain low gate charge for superior switching performance. This device is well suited for low voltage and battery powered applications.

• High performance trench technology for extremely low Rds(ON)
• Low gate charge typically 6.2nC
• Drain to source voltage (Vds) of -30V
• Gate to source voltage of ±20V
• Continuous drain current (Id) of -2A at 25°C
• Power dissipation (Pd) of 500mW
• Low on state resistance of 100mohm at Vgs -4.5V
• Operating temperature range from -55°C to 150°C