2EDR8258XXUMA1

2EDR8258XXUMA1 is an EiceDRIVER™ dual-channel isolated gate driver IC designed to drive Si and SiC MOSFETs and GaN HEMTs power switches. It is suited for use in applications with higher bus voltage or higher pollution degree and, in general, can ease PCB routing. This allows the operation as a dual-channel low-side, dual-channel high-side, or half-bridge gate driver with a configurable dead-time. With excellent common mode transient immunity (CMTI), low part-to-part skew, and fast signal propagation, the products are best suited for use in fast-switching power conversion systems. Potential applications include server, telecom SMPS, EV off-board chargers, low-voltage drives and power tools, solar micro inverter, solar optimizer, industrial power supply (SMPS, residential UPS). Isolation and safety certificates include UL1577 with VISO=5700VRMS, VDE0884-11 with VIOTM=8000Vpk, VIORM=1767Vpk, VIOSM=6875Vpk, IEC 60747-17, IEC62368-1, GB 4943.1-2022.

• Fast output clamping for VDDA/B < UVLO
• Input supply voltage at pin VDDI range from 3 to 17V (min. defined by UVLOVDDI)
• IVDDI quiescent current is 1.67mA typ at no switching, TJ = 25°C
• INx to OUTx turn-off propagation delay is 36ns typ at TJ = 25°C
• Pulse width distortion is 2ns typ at TJ = 25°C
• Rise time is 7.5ns typ at CLOAD = 1.8nF, TJ = 25°C
• Fall time is 6ns typ at CLOAD = 1.8nF, TJ = 25°C
• Static common-mode transient immunity is 150V/ns min at VCM = 1500V; INA, INB tied to VDDI
• DSO14-300mil package
• Ambient temperature range from -40 to 125°C