さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥1,205.54 (¥1,326.094) |
| 10+ | ¥1,176.47 (¥1,294.117) |
| 25+ | ¥1,147.39 (¥1,262.129) |
| 50+ | ¥1,118.32 (¥1,230.152) |
| 100+ | ¥1,089.24 (¥1,198.164) |
| 250+ | ¥1,060.16 (¥1,166.176) |
製品概要
MASTERGAN5 is an advanced power system-in-package integrating a gate driver and two enhancement mode GaN power transistors. The integrated GaN power transistors have 650 V drain‑source blocking voltage and RDS(ON) of 450 mΩ, while the high-side of the embedded gate driver can be easily supplied by the integrated bootstrap diode. The MASTERGAN5 features UVLO protection on both the lower and upper driving sections, preventing the power switches from operating in low efficiency or dangerous conditions, and the interlocking function avoids cross-conduction conditions. The input pins extended range allows easy interfacing with microcontrollers, DSP units or Hall effect sensors. The MASTERGAN5 operates in the industrial temperature range, -40°C to 125°C. The device is available in a compact 9x9 mm QFN package.
- Reverse current capability
- Zero reverse recovery loss
- Accurate internal timing match
- 3.3V to 15V compatible inputs with hysteresis and pull-down
- Over temperature protection
- Bill of material reduction
- Very compact and simplified layout
- Flexible, easy and fast design
技術仕様
4.75V
4A
-
31ピン
-
-
9.5V
-
QFN-EP
-
0
0
MASTERGAN5 の代替製品
1 見つかった製品
法律および環境情報
最後に重要な製造工程が行われた国生産国:Thailand
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書