VEMD8080

VEMD8080 is a silicon PIN photodiode. This is a high speed and high sensitive PIN photodiode with enhanced sensitivity for visible light. It is a low profile surface-mount device (SMD) including the chip with a 4.5mm² sensitive area detecting visible and near infrared radiation. Application includes high speed photo detector, wearables.

• 0.48mm low profile package, enhanced sensitivity for visible light
• Suitable for visible and near infrared radiation, fast response times
• Surface-mount package type, top view package form
• Angle of half sensitivity is ±65deg (typ, Ta=25°C), forward voltage is 1.2V (typ, IF=50mA, Ta=25°C)
• Reverse dark current is 0.2nA (typ, VR = 10V, E = 0, Tamb = 25°C)
• Diode capacitance is 47pF (typ, VR = 0V, f = 1MHz, E = 0, Tamb = 25°C)
• Open circuit voltage is 320mV (typ, Ee = 1mW/cm², λ = 950nm, Tamb = 25°C)
• Rise time is 70ns (typ, VR = 10V, RL = 1Kohm, λ = 830nm, Tamb = 25°C)
• Operating temperature range from -40 to +85°C