DMN3023L-7

DMN3023L-7 is a N-channel enhancement mode MOSFET. This new generation MOSFET is designed to minimize the on-state resistance (RDS(ON)) and maintain superior switching performance, making it ideal for high-efficiency power management applications. Typical applications include load switch, DC-DC converters, and power management functions.

• Low on-resistance, low gate threshold voltage
• Low input capacitance, fast switching speed
• Low input/output leakage, ESD protected gate
• Drain-source voltage is 30V at TA = +25°C
• Gate-source voltage is ±20V at TA = +25°C
• Continuous drain current is 6.2A at TA = +25°C, steady state, VGS = 10V
• Pulsed drain current (380µs pulse, duty cycle = 1%) is 44A at TA = +25°C
• Total power dissipation is 0.9W at TA = +25°C
• SOT23 case
• Operating and storage temperature range from -55 to +150°C