MRFE6VP100HR5

MRFE6VP100HR5 is a RF power LDMOS transistor designed for both narrowband and broadband ISM, broadcast and aerospace applications operating at frequencies from 1.8 to 2000MHz. It is fabricated using NXP enhanced ruggedness platform and are suitable for use in applications where high VSWRs are encountered.

• Wide operating frequency range
• Extremely rugged
• Unmatched, capable of very broadband operation
• Integrated stability enhancements
• Low thermal resistance and integrated ESD protection circuitry
• 400nAdc max gate source leakage current (VGS = 5Vdc, VDS = 0Vdc)
• 133VDC min drain source breakdown voltage (VGS = 0Vdc, ID = 50mA)
• 10μAdc max zero gate voltage drain leakage current (VDS = 100Vdc, VGS = 0Vdc)
• 27dB max power gain, 70% typ drain efficiency
• NI-780 transistor case style and 225°C max operating temperature