CY15B104Q-SXI

CY15B104Q-SXI is a 4-Mbit (512 K × 8) serial (SPI) F-RAM. It is a 4-Mbit non-volatile memory employing an advanced ferroelectric process. A ferroelectric random access memory or F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 151 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. Unlike serial flash and EEPROM, it performs write operations at bus speed. No write delays are incurred. Data is written to the memory array immediately after each byte is successfully transferred to the device. The next bus cycle can commence without the need for data polling. In addition, the product offers substantial write endurance compared to other non-volatile memories. Application includes bringing a whole new lifestyle and health experience to today’s connected citizen, consumer electronics, and space applications.

• Voltage range from 2.0V to 3.6V, 4-Mbit density, SPI F-RAM
• 4Mbit ferroelectric random access memory (F-RAM) logically organized as 512 K × 8
• High-endurance 100 trillion read/writes, 151-year data retention
• No Delay™ writes, advanced high-reliability ferroelectric process
• Direct hardware replacement for serial flash and EEPROM
• Hardware protection using the Write Protect (active low WP) pin
• S/W protection using write disable instruction, S/W block protection for 1/4, 1/2 or entire array
• 300µA active current at 1MHz, VDD standby current is 100µA typ (TA=25°C)
• Sleep mode current is 3µA typ (TA=25°C)
• 8-pin SOIC package, industrial operating temperature range from -40 to +85°C