再入荷の通知を受け取る
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥665.97 (¥732.567) |
| 10+ | ¥612.49 (¥673.739) |
| 25+ | ¥593.05 (¥652.355) |
| 50+ | ¥573.61 (¥630.971) |
| 100+ | ¥537.97 (¥591.767) |
| 250+ | ¥525.82 (¥578.402) |
| 500+ | ¥513.66 (¥565.026) |
製品情報
製品概要
The N01S830BAT22I is a 1Mb ultra-low power serial SRAM in 8 pin TSSOP package. The serial SRAM family includes several integrated memory devices including this 1 Mb serially accessed static random access memory, internally organized as 128K words by 8bits. The devices are designed and fabricated using advanced CMOS technology to provide both high-speed performance and low power. The devices operate with a single chip select (CS) input and use a simple Serial Peripheral Interface (SPI) protocol. In SPI mode, a single data-in (SI) and data-out (SO) line is used along with the clock (SCK) to access data within the device. In DUAL mode, two multiplexed data-in/data-out (SIO0-SIO1) lines are used and in QUAD mode, four multiplexed data-in/data-out (SIO0-SIO3) lines are used with the clock to access the memory. The N01S830HA device has a battery back-up version to be used with a battery to retain data when power is lost.
- Power supply range from 2.5V to 5.5V
- Very low typical standby current is less than 4µA at +85°C
- Very low operating current is less than 10mA
- Single bit SPI access, dual bit and quad bit SPI like access serial interface
- Flexible operating modes such as word mode, page mode, burst mode (full array)
- High frequency read and write operation clock frequency up to 20MHz
- Built-in write protection
- High reliability unlimited write cycles
- Operating temperature range from -40°C to +85°C
技術仕様
同期 SRAM
128K x 8ビット
8ピン
5.5V
20MHz
-40°C
-
0
1MB
TSSOP
2.5V
-
表面実装
85°C
0
法律および環境情報
最後に重要な製造工程が行われた国生産国:Thailand
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書