DN2530N3-G

The DN2530N3-G is a N-channel depletion-mode vertical DMOS FET utilizes an advanced vertical diffusion metal oxide semiconductor (DMOS) structure and a well proven silicon-gate manufacturing process. This combination produces a device with the power-handling capabilities of bipolar transistors, plus the high-input impedance and positive-temperature coefficient inherent in metal-oxide semiconductor (MOS) devices. Characteristic of all MOS structures, this device is free from thermal runaway and thermally-induced secondary breakdown. The low threshold normally-on DMOS field-effect transistor (FET) is ideally suited to a wide range of switching and amplifying applications where a very low threshold voltage, high breakdown voltage, high input impedance, low input capacitance and fast switching speeds are desired.

• Low ON-resistance
• Free from secondary breakdown
• Low input and output leakages