1,000 入荷予定あり。今すぐ在庫を予約できます。
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥746.29 (¥820.919) |
| 10+ | ¥568.68 (¥625.548) |
| 25+ | ¥462.74 (¥509.014) |
| 50+ | ¥462.32 (¥508.552) |
| 100+ | ¥461.9 (¥508.09) |
| 250+ | ¥461.48 (¥507.628) |
| 500+ | ¥461.06 (¥507.166) |
| 1000+ | ¥460.63 (¥506.693) |
製品概要
The TD350E is an advanced Gate Driver for IGBTs and power MOSFETs. Control and protection functions are included and allow the design of high reliability systems. The innovative active Miller clamp function eliminates the need for negative gate drive in most applications and allows the use of a simple bootstrap supply for the high side driver. The device also includes IGBT de-saturation protection and a FAULT status output and is compatible with both pulse transformer and optocoupler signals.
- Active Miller clamp feature
- Two-level turn-OFF with adjustable level and delay
- De-saturation detection
- Fault status output
- Negative gate drive capability
- Separate sink and source outputs for easy gate driving
- UVLO protection
- 2kV ESD protection (HBM)
注意事項
ESD sensitive device, take proper precaution while handling the device. Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
技術仕様
1チャネル
ハイサイド
14ピン
表面実装
1.5A
-
-40°C
500ns
-
0
-
IGBT, MOSFET
SOIC
非反転
2.3A
26V
125°C
450ns
-
0
関連製品
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法律および環境情報
最後に重要な製造工程が行われた国生産国:China
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書