さらに必要ですか?
| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥206.76 (¥227.436) |
| 10+ | ¥164.29 (¥180.719) |
製品概要
The FDMS86101 is a 100V N-channel PowerTrench® MOSFET has been specially tailored to minimize the on-state resistance and to maintain low gate charge for superior switching performance. The latest medium voltage power MOSFET is optimized power switches combining small gate charge (QG), small reverse recovery charge (Qrr) and soft reverse recovery body diode, which contributes fast switching for synchronous rectification in AC/DC power supplies. It employs shielded-gate structure that provides charge balance. By utilizing this advanced technology, the FOM (figure of merit (QGxRDS(ON))) of these devices is 66% lower than that of previous generation. Soft body diode performance of new PowerTrench® MOSFET is able to eliminate snubber circuit or replace higher voltage rating - MOSFET need circuit because it can minimize the undesirable voltage spikes in synchronous rectification. This product is general usage and suitable for many different applications.
- 100% UIL tested
- 100% Rg tested
- Advance package and silicon combination for low RDS (ON) and high efficiency
技術仕様
N チャネル
60A
パワー 56
10V
104W
150°C
-
0
100V
8000µohm
表面実装
2.9V
8ピン
-
0
関連製品
1 見つかった製品
法律および環境情報
最後に重要な製造工程が行われた国生産国:China
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書