PMD17K100

The PMD17K100 is a PNP power Darlington Transistor features monolithic epitaxial base structures with built-in base to emitter shunt resistors. It is CVD glass passivated to increase reliability and provide reduced high-temperature reverse leakage current. This important feature enables this device to meet guaranteed operating junction temperatures of 200°C. Internal diode protection of the Darlington configuration is built into the structure to limit the device power dissipation during overshoot.

• Guaranteed and 100% tested for ISB insuring maximum performance at high energy levels
• Low thermal resistance for more use-able power and lower operating temperatures
• Hermetically sealed