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| 数量 | 価格(税込み) |
|---|---|
| 1+ | ¥70.9 (¥77.99) |
| 10+ | ¥44.28 (¥48.708) |
| 100+ | ¥42.27 (¥46.497) |
| 500+ | ¥40.26 (¥44.286) |
| 1000+ | ¥38.25 (¥42.075) |
| 2500+ | ¥36.24 (¥39.864) |
| 5000+ | ¥34.23 (¥37.653) |
製品概要
The MC33172DR2G is a low power monolithic dual Operational Amplifier operates at 180μA per amplifier and offer 1.8MHz of gain bandwidth product and 2.1V/μs slew rate without the use of JFET device technology. Although this series can be operated from split supplies, it is particularly suited for single supply operation, since the common-mode input voltage includes ground potential (VEE). With a Darlington input stage, this device exhibit high input resistance, low input offset voltage and high gain. The all NPN output stage, characterized by no dead-band crossover distortion and large output voltage swing, provides high capacitance drive capability, excellent phase and gain margins, low open loop high frequency output impedance and symmetrical source/sink AC frequency response.
- Output short-circuit protection
- Wide input common mode range, including ground (VEE)
- 2mV Low input offset voltage
- 0 to 500pF Large capacitance drive capability
- 0.03% Low total harmonic distortion
- 60° Excellent phase margin
- 15dB Excellent gain margin
技術仕様
2チャネル
2.1V/µs
SOIC
低電力
2mV
表面実装
85°C
-
0
-
2 x アンプ
1.8MHz
± 1.5V ~ ± 22V
8ピン
-
20nA
-40°C
-
0
SOIC
1.8MHz
2.1V/µs
MC33172DR2G の代替製品
1 見つかった製品
法律および環境情報
最後に重要な製造工程が行われた国生産国:Philippines
最後に重要な製造工程が行われた国
RoHS
RoHS
製品コンプライアンス証明書