2N5680

The 2N5680 is a high-quality, general-purpose NPN bipolar junction transistor (BJT) designed for a wide range of applications. With its high current gain, low noise figure, and high switching speeds, this transistor is ideal for use in amplifiers, switches, and other electronic circuits.

• High Current Gain: The 2N5680 has a high current gain (β) of up to 200, making it suitable for use in amplifiers and other current-controlled applications.
• Low Noise Figure: The transistor has a low noise figure, ensuring minimal signal distortion and noise in audio and other sensitive applications.
• The 2N5680 has a fast switching time, making it suitable for use in high-speed switching applications such as pulse-width modulation (PWM) and digital circuits.
• High Collector-Emitter Voltage: The transistor has a high collector-emitter voltage (Vce) of up to 30V, allowing it to handle high-voltage applications.
• Low Saturation Voltage: The 2N5680 has a low saturation voltage (Vce(sat)) of up to 0.2V, minimizing power losses and heat generation in switching applications.
• High performance and reliability
• Low noise and distortion
• Fast switching speeds
• High current gain and low saturation voltage
• Wide range of applications
• Low cost and high availability