MICRON MTA4ATF51264HZ-3G2R1

MTA4ATF51264HZ-3G2R1 is a high-speed DDR4 SDRAM module that uses a DDR4 SDRAM device with two or four internal memory bank groups. DDR4 SDRAM module utilize 4- and 8-bit-wide DDR4 SDRAM devices have four internal bank groups consisting of four memory banks each, providing a total of 16 banks. 16-bit-wide DDR4 SDRAM device has two internal bank groups consisting of four memory banks each, providing a total of eight banks. DDR4 SDRAM module benefits from the DDR4 SDRAM's use of an 8n-prefetch architecture with an interface designed to transfer two data words per clock cycle at the I/O pins. A single READ or WRITE operation for the DDR4 SDRAM effectively consists of a single 8n-bit-wide, four-clock data transfer at the internal DRAM core and eight corresponding n-bit-wide, one-half-clock-cycle data transfers at the I/O pins. DDR4 module uses two sets of differential signals: DQS_t and DQS_c to capture data and CK_t and CK_c to capture commands, addresses, and control signals.