INTEGRATED SILICON SOLUTION / ISSI IS62WV12816EBLL-45BLI

IS62WV12816EBLL-45BLI is a 128Kx16 low voltage, ultra-low power CMOS static RAM. It is a high-speed, 2Mbit static RAM organized as 128K words by 16 bits. It is fabricated using ISSI's high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields high-performance and low power consumption devices. When CS1# is HIGH (deselected) or when CS2 is LOW (deselected) or when CS1# is LOW, CS2 is HIGH and both LB# and UB# are HIGH, the device assumes a standby mode at which the power dissipation can be reduced down with CMOS input levels. Easy memory expansion is provided by using a chip enable and output enable inputs. The active LOW write enables (WE#) to control both the writing and reading of the memory. A data byte allows upper byte (UB#) and lower byte (LB#) access.