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Transistor Polarity Collector Emitter Voltage Max Transition Frequency Power Dissipation Continuous Collector Current Transistor Case Style No. of Pins DC Current Gain hFE Min Transistor Mounting Operating Temperature Max Product Range Qualification
 
 
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BFU590QX
BFU590QX - Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

2776273

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

NXP

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209 deliver in 2-3 business days from our SG warehouse :(SG stock) Order before 17:00 Mon-Fri (excluding National Holidays)

7,144 deliver in 3-4 business days from our UK warehouse :(UK stock) Order before 17:00 Mon-Fri (excluding National Holidays)

More stock available week commencing 7/14/25

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1+ ¥153.07 (¥168.38) 10+ ¥99.36 (¥109.30) 100+ ¥81.91 (¥90.10) 500+ ¥78.52 (¥86.37) 1000+ ¥76.34 (¥83.97) 5000+ ¥74.93 (¥82.42) More Pricing...

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NPN 12V 8GHz 2W 200mA SOT-89 3Pins 60hFE Surface Mount 150°C - AEC-Q101
BAP65-03,115
BAP65-03,115 - RF / Pin Diode, Single, 0.35 ohm, 30 V, SOD-323, 2 Pin, 0.375 pF

1757792

RF / Pin Diode, Single, 0.35 ohm, 30 V, SOD-323, 2 Pin, 0.375 pF

NXP

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- - - 500mW - - - - - 150°C BAP65 -
BB202,135
BB202,135 - Variable Capacitance Diode, 11.2 pF, 10 mA, 6 V, 85 °C, SOD-523, 2 Pin

2775912

Variable Capacitance Diode, 11.2 pF, 10 mA, 6 V, 85 °C, SOD-523, 2 Pin

NXP

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- - - - - - - - - 85°C - -
NXPSC20650W-AQ
NXPSC20650W-AQ - Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 16 nC, TO-247

3586117

Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 16 nC, TO-247

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236 deliver in 3-4 business days from our UK warehouse :(UK stock) Order before 17:00 Mon-Fri (excluding National Holidays)

More stock available week commencing 6/16/25

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1+ ¥936.10 (¥1,029.71) 240+ ¥717.94 (¥789.73) 480+ ¥661.17 (¥727.29) 1200+ ¥622.22 (¥684.44) 2640+ ¥601.07 (¥661.18)

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- - - - - - - - - 175°C - AEC-Q101
NXPSC08650BJ
NXPSC08650BJ - Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-263 (D2PAK)

2902398

Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-263 (D2PAK)

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4,423 deliver in 3-4 business days from our UK warehouse :(UK stock) Order before 17:00 Mon-Fri (excluding National Holidays)

More stock available week commencing 10/20/25

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- - - - - - - - - 175°C - -
AFT05MS004NT1
AFT05MS004NT1 - RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

2776253

RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

NXP

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- - - 28W - SOT-89 3Pins - Surface Mount 150°C - -
MRFE6VP61K25HR6
MRFE6VP61K25HR6 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

2776247

RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

NXP

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1+ ¥39,561.35 (¥43,517.49) 5+ ¥35,484.68 (¥39,033.15) 10+ ¥31,408.00 (¥34,548.80)

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- - - 1.333kW - NI-1230H-4S 4Pins - Flange 225°C - -
MRF101AN
MRF101AN - RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

2985308

RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

NXP

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1+ ¥4,258.64 (¥4,684.50) 5+ ¥3,847.02 (¥4,231.72) 10+ ¥3,435.40 (¥3,778.94) 50+ ¥3,105.81 (¥3,416.39) 100+ ¥3,003.77 (¥3,304.15) 250+ ¥2,825.84 (¥3,108.42) More Pricing...

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- - - 182W - TO-220 3Pins - Through Hole 175°C MRF101AN; MRF101BN -
MRF300AN
MRF300AN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917575

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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1+ ¥8,580.50 (¥9,438.55) 5+ ¥7,616.56 (¥8,378.22) 10+ ¥6,652.62 (¥7,317.88) 50+ ¥6,455.12 (¥7,100.63) 100+ ¥6,257.61 (¥6,883.37)

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- - - 272W - TO-247 3Pins - Through Hole 175°C MRF300AN; MRF300BN -
BFU590GX
BFU590GX - Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

2776268

Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

NXP

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NPN 12V 8.5GHz 2W 200mA SOT-223 4Pins 60hFE Surface Mount 150°C - AEC-Q101
MRF1K50HR5
MRF1K50HR5 - RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

2776261

RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

NXP

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- - - 1.667kW - NI-1230 4Pins - Flange 225°C - -
MRFE6VP6300HR5
MRFE6VP6300HR5 - RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

2776250

RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

NXP

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- - - 1.05kW - NI-780 4Pins - Flange 225°C - -
BFU768F,115
BFU768F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

2890622

Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

NXP

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NPN 2.8V 110GHz 220mW 70mA SOT-343F 4Pins 330hFE Surface Mount 150°C BFU768F -
BFU520WX
BFU520WX - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

2776270

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

NXP

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NPN 12V 10GHz 450mW 30mA SOT-323 3Pins 60hFE Surface Mount 150°C - AEC-Q101
BB175X
BB175X - Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

2775911

Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

NXP

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- - - - - - - - - 125°C - -
AFT05MP075NR1
AFT05MP075NR1 - RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

2890588

RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

NXP

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- - - 690W - TO-270WB 4Pins - Flange 150°C AFT05MP075N -
NXPSC206506Q
NXPSC206506Q - Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 28 nC, TO-220AC

3586115

Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 28 nC, TO-220AC

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1+ ¥1,088.59 (¥1,197.45) 10+ ¥934.99 (¥1,028.49) 100+ ¥778.05 (¥855.86) 500+ ¥686.77 (¥755.45) 1000+ ¥617.76 (¥679.54) 2000+ ¥578.81 (¥636.69) More Pricing...

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- - - - - - - - - 175°C - -
AFT09MS007NT1
AFT09MS007NT1 - RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

2776255

RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

NXP

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- - - 114W - PLD-1.5W 2Pins - Surface Mount 150°C - -
MRFE6VP5150NR1
MRFE6VP5150NR1 - RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

2776263

RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

NXP

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- - - 952W - TO-270WB 4Pins - Flange 225°C - -
MRF300BN
MRF300BN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917576

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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- - - 272W - TO-247 3Pins - Through Hole 175°C MRF300AN; MRF300BN -
BFU520AR
BFU520AR - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

2776271

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

NXP

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NPN 12V 10GHz 450mW 30mA SOT-23 3Pins 60hFE Surface Mount 150°C - AEC-Q101
BFU550AR
BFU550AR - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-23

2776274

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-23

NXP

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NPN 12V 11GHz 450mW 50mA SOT-23 3Pins 60hFE Surface Mount 150°C - AEC-Q101
BFU520YX
BFU520YX - Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

2776280

Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

NXP

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Dual NPN 12V 10GHz 450mW 30mA SOT-363 6Pins 60hFE Surface Mount 150°C - AEC-Q101
MRFE6S9060NR1
MRFE6S9060NR1 - RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

2776249

RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

NXP

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Suggested replacement for:2776249
2776249RL in Re-reel

1+ ¥7,977.74 (¥8,775.51) 5+ ¥7,091.52 (¥7,800.67) 10+ ¥6,205.30 (¥6,825.83) 50+ ¥6,010.66 (¥6,611.73) 100+ ¥5,930.74 (¥6,523.81)

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- - - - - TO-270 2Pins - Flange 225°C - -
NXPSC08650Q
NXPSC08650Q - Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-220AC

2902399

Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-220AC

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- - - - - - - - - 175°C - -