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AFT20S015GNR1
AFT20S015GNR1 - RF FET Transistor, 65 V, 11 W, 1.805 GHz, 2.7 GHz, TO-270G

2890592

RF FET Transistor, 65 V, 11 W, 1.805 GHz, 2.7 GHz, TO-270G

NXP

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65V - 11W 1.805GHz 2.7GHz TO-270G 2Pins 150°C N Channel Surface Mount AFT20S015GN
MRFE6VP5600HR6
MRFE6VP5600HR6 - RF FET Transistor, 130 V, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

2985241

RF FET Transistor, 130 V, 1.667 kW, 1.8 MHz, 600 MHz, NI-1230

NXP

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More stock available week commencing 8/4/25

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130V - 1.667kW 1.8MHz 600MHz NI-1230 4Pins 225°C N Channel Flange -
BFU550XAR
BFU550XAR - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-143B

2776282

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-143B

NXP

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More stock available week commencing 8/25/25

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- - 450mW - - SOT-143B 4Pins 150°C - Surface Mount -
AFT05MS006NT1
AFT05MS006NT1 - RF FET Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W

2776258

RF FET Transistor, 30 VDC, 128 W, 136 MHz, 941 MHz, PLD-1.5W

NXP

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More stock available week commencing 8/18/25

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30VDC - 128W 136MHz 941MHz PLD-1.5W 3Pins 150°C N Channel Surface Mount -
MRFX1K80GNR5
MRFX1K80GNR5 - RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230G

2985307

RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230G

NXP

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179V - 3.333kW 1.8MHz 400MHz OM-1230G 4Pins 225°C N Channel Surface Mount -
MRFE6VP5150GNR1
MRFE6VP5150GNR1 - RF FET Transistor, LDMOS, 139 V, 952 W, 1.8 MHz, 600 MHz, TO-270WBG

2985235

RF FET Transistor, LDMOS, 139 V, 952 W, 1.8 MHz, 600 MHz, TO-270WBG

NXP

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139V - 952W 1.8MHz 600MHz TO-270WBG 4Pins 225°C N Channel Surface Mount -
BFU710F,115
BFU710F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 43 GHz, 136 mW, 2 mA, SOT-343F

2776294

Bipolar - RF Transistor, NPN, 2.8 V, 43 GHz, 136 mW, 2 mA, SOT-343F

NXP

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1+ ¥76.62 (¥84.28) 10+ ¥65.39 (¥71.93) 100+ ¥48.06 (¥52.87) 500+ ¥38.02 (¥41.82) 1000+ ¥35.61 (¥39.17)

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- - 136mW - - SOT-343F 4Pins 150°C - Surface Mount -
MRFE6S9060NR1
MRFE6S9060NR1 - RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

2776249RL

RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

NXP

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2776249 in Cut Tape

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66VDC - - 470MHz 960MHz TO-270 2Pins 225°C N Channel Flange -
BFU550WF
BFU550WF - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-323

2776296

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-323

NXP

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- - 450mW - - SOT-323 3Pins 150°C - Surface Mount -
MMRF1015NR1
MMRF1015NR1 - RF FET Transistor, 0.27 V, 1 MHz, 2 GHz, TO-270

3128725

RF FET Transistor, 0.27 V, 1 MHz, 2 GHz, TO-270

NXP

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270mV - - 1MHz 2GHz TO-270 2Pins 225°C N Channel Flange -
BFU520AVL
BFU520AVL - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 5 mA, SOT-23

4235978

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 5 mA, SOT-23

NXP

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- - 450mW - - SOT-23 3Pins 150°C - Surface Mount -
BB175X
BB175X - Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

2775911

Variable Capacitance Diode, 2.89 pF, 20 mA, 32 V, 125 °C, SOD-523, 2 Pin

NXP

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- - - - - - - 125°C - - -
BFU590GX
BFU590GX - Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

2776268

Bipolar - RF Transistor, NPN, 12 V, 8.5 GHz, 2 W, 200 mA, SOT-223

NXP

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- - 2W - - SOT-223 4Pins 150°C - Surface Mount -
BFU520WX
BFU520WX - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

2776270

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-323

NXP

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- - 450mW - - SOT-323 3Pins 150°C - Surface Mount -
AFT05MS004NT1
AFT05MS004NT1 - RF FET, 30V, 941MHZ, SOT-89-3

3974653

RF FET, 30V, 941MHZ, SOT-89-3

NXP

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30VDC - - - - - - - N Channel - -
BFU530AVL
BFU530AVL - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 10 mA, SOT-23

4235991

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 10 mA, SOT-23

NXP

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- - 450mW - - SOT-23 3Pins 150°C - Surface Mount -
BFU530WF
BFU530WF - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 10 mA, SOT-323

4235994

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 10 mA, SOT-323

NXP

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- - 450mW - - SOT-323 3Pins 150°C - Surface Mount -
NXPSC206506Q
NXPSC206506Q - Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 28 nC, TO-220AC

3586115

Silicon Carbide Schottky Diode, Single, 650 V, 20 A, 28 nC, TO-220AC

WEEN SEMICONDUCTORS

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- - - - - - - 175°C - - -
BFU520AR
BFU520AR - Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

2776271

Bipolar - RF Transistor, NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-23

NXP

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- - 450mW - - SOT-23 3Pins 150°C - Surface Mount -
BAP64Q,125
BAP64Q,125 - RF / Pin Diode, Dual Common Anode, 0.7 ohm, 100 V, SOT-753, 5 Pin, 0.23 pF

2775914

RF / Pin Diode, Dual Common Anode, 0.7 ohm, 100 V, SOT-753, 5 Pin, 0.23 pF

NXP

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- - 125mW - - - - 150°C - - -
BFU550AR
BFU550AR - Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-23

2776274

Bipolar - RF Transistor, NPN, 12 V, 11 GHz, 450 mW, 50 mA, SOT-23

NXP

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- - 450mW - - SOT-23 3Pins 150°C - Surface Mount -
BFU520YX
BFU520YX - Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

2776280

Bipolar - RF Transistor, Dual NPN, 12 V, 10 GHz, 450 mW, 30 mA, SOT-363

NXP

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- - 450mW - - SOT-363 6Pins 150°C - Surface Mount -
BB135,115
BB135,115 - Variable Capacitance Diode, Varicap, 21 pF, 20 mA, 30 V, 125 °C, SOD-323, 2 Pin

1349652

Variable Capacitance Diode, Varicap, 21 pF, 20 mA, 30 V, 125 °C, SOD-323, 2 Pin

NXP

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- - - - - - - 125°C - - BB135
BBY40,235
BBY40,235 - Variable Capacitance Diode, 6 pF, 20 mA, 30 V, 125 °C, SOT-23, 3 Pin

2890020

Variable Capacitance Diode, 6 pF, 20 mA, 30 V, 125 °C, SOT-23, 3 Pin

NXP

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- - - - - - - 125°C - - -
NXPSC04650DJ
NXPSC04650DJ - Silicon Carbide Schottky Diode, Single, 650 V, 4 A, TO-252 (DPAK)

2902396

Silicon Carbide Schottky Diode, Single, 650 V, 4 A, TO-252 (DPAK)

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- - - - - - - 175°C - - -