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Diode Configuration Resistance @ If Reverse Voltage Diode Case Style No. of Pins Diode Capacitance Forward Current Operating Temperature Max Forward Voltage Power Dissipation Diode Mounting Product Range
 
 
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BAP65-03,115
BAP65-03,115 - RF / Pin Diode, Single, 0.35 ohm, 30 V, SOD-323, 2 Pin, 0.375 pF

1757792

RF / Pin Diode, Single, 0.35 ohm, 30 V, SOD-323, 2 Pin, 0.375 pF

NXP

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400 deliver in 3-4 business days from our UK warehouse :(UK stock) Order before 17:00 Mon-Fri (excluding National Holidays)

More stock available week commencing 8/25/25

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5+ ¥32.92 (¥36.21) 10+ ¥21.48 (¥23.63) 100+ ¥18.19 (¥20.01) 500+ ¥17.56 (¥19.32) 1000+ ¥15.84 (¥17.42) 5000+ ¥15.45 (¥17.00) More Pricing...

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Single 0.35ohm 30V SOD-323 2 Pin 0.375pF 100mA 150°C 1.1V 500mW Surface Mount BAP65
BB202,135
BB202,135 - Variable Capacitance Diode, 11.2 pF, 10 mA, 6 V, 85 °C, SOD-523, 2 Pin

2775912

Variable Capacitance Diode, 11.2 pF, 10 mA, 6 V, 85 °C, SOD-523, 2 Pin

NXP

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- - 6V SOD-523 2 Pin - - 85°C - - Surface Mount -
BFU590QX
BFU590QX - Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

2776273

Bipolar - RF Transistor, NPN, 12 V, 8 GHz, 2 W, 200 mA, SOT-89

NXP

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209 deliver in 2-3 business days from our SG warehouse :(SG stock) Order before 17:00 Mon-Fri (excluding National Holidays)

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More stock available week commencing 8/25/25

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- - - - - - - 150°C - 2W - -
BFU730LXZ
BFU730LXZ - Bipolar - RF Transistor, NPN, 3 V, 53 GHz, 160 mW, 30 mA, SOT-883C

2776289

Bipolar - RF Transistor, NPN, 3 V, 53 GHz, 160 mW, 30 mA, SOT-883C

NXP

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- - - - - - - 150°C - 160mW - -
AFT05MS004NT1
AFT05MS004NT1 - RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

2776253

RF FET Transistor, 7.5 V/4 W Test, 30 VDC, 28 W, 136 MHz, 941 MHz, SOT-89

NXP

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- - - - - - - 150°C - 28W - -
MRFE6VP61K25HR6
MRFE6VP61K25HR6 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

2776247

RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

NXP

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- - - - - - - 225°C - 1.333kW - -
MRF300AN
MRF300AN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917575

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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1+ ¥8,628.46 (¥9,491.31) 5+ ¥7,537.80 (¥8,291.58) 10+ ¥6,447.13 (¥7,091.84) 50+ ¥6,271.23 (¥6,898.35)

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- - - - - - - 175°C - 272W - MRF300AN; MRF300BN
MRF101AN
MRF101AN - RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

2985308

RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

NXP

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- - - - - - - 175°C - 182W - MRF101AN; MRF101BN
MRF1K50HR5
MRF1K50HR5 - RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

2776261

RF FET Transistor, 135 VDC, 1.667 kW, 1.8 MHz, 500 MHz, NI-1230

NXP

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- - - - - - - 225°C - 1.667kW - -
AFT05MP075NR1
AFT05MP075NR1 - RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

2890588

RF FET Transistor, 40 V, 690 W, 136 MHz, 520 MHz, TO-270WB

NXP

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- - - - - - - 150°C - 690W - AFT05MP075N
MRFE6VP6300HR5
MRFE6VP6300HR5 - RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

2776250

RF FET Transistor, 130 VDC, 1.05 kW, 1.8 MHz, 600 MHz, NI-780

NXP

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- - - - - - - 225°C - 1.05kW - -
BFU768F,115
BFU768F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

2890622

Bipolar - RF Transistor, NPN, 2.8 V, 110 GHz, 220 mW, 70 mA, SOT-343F

NXP

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- - - - - - - 150°C - 220mW - BFU768F
AFT09MS007NT1
AFT09MS007NT1 - RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

2776255

RF FET Transistor, 30 VDC, 114 W, 136 MHz, 941 MHz, PLD-1.5W

NXP

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- - - - - - - 150°C - 114W - -
MRFE6VP5150NR1
MRFE6VP5150NR1 - RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

2776263

RF FET Transistor, 133 VDC, 952 W, 1.8 MHz, 600 MHz, TO-270WB

NXP

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- - - - - - - 225°C - 952W - -
MRF300BN
MRF300BN - RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

2917576

RF FET Transistor, 133 V, 272 W, 1.8 MHz, 250 MHz, TO-247

NXP

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- - - - - - - 175°C - 272W - MRF300AN; MRF300BN
MRFE6VP61K25HR5
MRFE6VP61K25HR5 - RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

2776254

RF FET Transistor, 133 VDC, 1.333 kW, 1.8 MHz, 600 MHz, NI-1230H-4S

NXP

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- - - - - - - 225°C - 1.333kW - -
NXPSC20650W-AQ
NXPSC20650W-AQ - Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 16 nC, TO-247

3586117

Silicon Carbide Schottky Diode, Dual Common Cathode, 650 V, 20 A, 16 nC, TO-247

WEEN SEMICONDUCTORS

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1+ ¥936.10 (¥1,029.71) 240+ ¥717.94 (¥789.73) 480+ ¥661.17 (¥727.29) 1200+ ¥622.22 (¥684.44) 2640+ ¥601.07 (¥661.18)

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Dual Common Cathode - - TO-247 3 Pin - - 175°C - - Through Hole -
MRFE6S9060NR1
MRFE6S9060NR1 - RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

2776249

RF FET Transistor, 66 VDC, 470 MHz, 960 MHz, TO-270

NXP

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Suggested replacement for:2776249
2776249RL in Re-reel

1+ ¥7,923.72 (¥8,716.09) 5+ ¥7,071.27 (¥7,778.40) 10+ ¥6,218.81 (¥6,840.69) 50+ ¥6,074.77 (¥6,682.25) 100+ ¥5,930.72 (¥6,523.79)

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- - - - - - - 225°C - - - -
BFU520R
BFU520R - Bipolar - RF Transistor, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, SOT-143B

2890614

Bipolar - RF Transistor, NPN, 12 V, 10.5 GHz, 450 mW, 5 mA, SOT-143B

NXP

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- - - - - - - 150°C - 450mW - BFU520
MW6S004NT1
MW6S004NT1 - RF FET Transistor, 68 VDC, 1 MHz, 2000 MHz, PLD-1.5

2776246

RF FET Transistor, 68 VDC, 1 MHz, 2000 MHz, PLD-1.5

NXP

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- - - - - - - 150°C - - - -
MRF101BN
MRF101BN - RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

2985309

RF FET Transistor, 133 V, 182 W, 1.8 MHz, 250 MHz, TO-220

NXP

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- - - - - - - 175°C - 182W - MRF101AN; MRF101BN
MRFX1K80NR5
MRFX1K80NR5 - RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230

2985306

RF FET Transistor, 179 V, 3.333 kW, 1.8 MHz, 400 MHz, OM-1230

NXP

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- - - - - - - 225°C - 3.333kW - -
BFU730F,115
BFU730F,115 - Bipolar - RF Transistor, NPN, 2.8 V, 55 GHz, 197 mW, 5 mA, SOT-343F

2776279

Bipolar - RF Transistor, NPN, 2.8 V, 55 GHz, 197 mW, 5 mA, SOT-343F

NXP

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- - - - - - - 150°C - 197mW - -
AFT27S006NT1
AFT27S006NT1 - RF FET Transistor, 65 V, 728 MHz, 3700 MHz, PLD-1.5W

2890593

RF FET Transistor, 65 V, 728 MHz, 3700 MHz, PLD-1.5W

NXP

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- - - - - - - 150°C - - - AFT27S006N
AFT20S015GNR1
AFT20S015GNR1 - RF FET Transistor, 65 V, 11 W, 1.805 GHz, 2.7 GHz, TO-270G

2890592

RF FET Transistor, 65 V, 11 W, 1.805 GHz, 2.7 GHz, TO-270G

NXP

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- - - - - - - 150°C - 11W - AFT20S015GN