CY15B102Q-SXE

CY15B102Q-SXE is a 2Mbit (256 K × 8) serial (SPI) automotive F-RAM. It is a non-volatile memory employing an advanced ferroelectric process. F-RAM is non-volatile and performs reads and writes similar to RAM. It provides reliable data retention for 121 years while eliminating the complexities, overhead, and system-level reliability problems caused by serial flash, EEPROM, and other non-volatile memories. The CY15B102Q is capable of supporting 10^13 read/write cycles, or 10 million times more write cycles than EEPROM. It is ideal for non-volatile memory applications requiring frequent or rapid writes. Examples range from data collection, where the number of write cycles may be critical, to demanding industrial controls where the long write time of serial flash or EEPROM can cause data loss.

• NoDelay™ writes, advanced high-reliability ferroelectric process
• Very fast serial peripheral interface (SPI), up to 25MHz frequency
• Direct hardware replacement for serial (I²C) EEPROM
• Sophisticated write protection scheme, software protection using write disable instruction
• Software block protection for 1/4, 1/2, or entire array
• Hardware protection using the write protect (active-low WP) pin
• AEC Q100 grade 1 compliant
• Low-voltage operation VDD=2.0V to 3.6V
• 8-pin SOIC package
• Automotive-E temperature range from -40°C to +125°C