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VISHAY SIHH070N60EF-T1GE3

Power MOSFET, N Channel, 600 V, 36 A, 0.071 ohm, PowerPAK, Surface Mount

VISHAY SIHH070N60EF-T1GE3

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Manufacturer:
VISHAY VISHAY
Manufacturer Part No:
SIHH070N60EF-T1GE3
Order Code:
3263504
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Product Range
EF
ECAD / MCAD
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Product Range Selector (EF)

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Product Overview

SIHH070N60EF-T1GE3 is an EF series power MOSFET with fast body diode. It features the 4th generation E series technology. Application includes server and telecom power supplies, switch mode power supplies (SMPS), power factor correction power supplies (PFC), high-intensity discharge (HID), fluorescent ballast lighting (lighting), welding, induction heating, motor drives, battery chargers and solar (PV inverters) (industrial).
  • Low figure-of-merit (FOM) Ron x Qg, low effective capacitance (Co(er))
  • Reduced switching and conduction losses, avalanche energy rated (UIS)
  • Maximum power dissipation is 202W (TC = 25°C)
  • Gate-source threshold voltage range from 3 to 5V (TJ = 25°C, VDS = VGS, ID = 250μA)
  • Drain-source breakdown voltage is 600V (VGS = 0V, ID = 250μA, TJ = 25°C)
  • Continuous drain current (TJ = 150 °C) is 36A (TC = 25°C, VGS at 10V)
  • Turn-on delay time is 36ns, fall time is 38ns (typ, VDD = 480V, ID = 15A, VGS = 10V, Rg = 9.1ohm)
  • Diode forward voltage is 1.2V (TJ = 25 °C, IS = 15A, VGS = 0V)
  • PowerPAK 8 x 8 package, operating junction and storage temperature range from -55 to +150°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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N Channel

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PowerPAK

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Surface Mount

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Technical Documents (2)

Packaging type Cut Tape

1,300 In stock Need more?

340 deliver in 2-3 business days from our SG warehouse
960 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥1,238.33 ( ¥1,362.16  Inc. JCT)

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