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STMICROELECTRONICS STPSC10H065G-TR
Silicon Carbide Schottky Diode, 650V Series, Single, 650 V, 10 A, 28.5 nC, TO-263
- Manufacturer:
- STMICROELECTRONICS STMICROELECTRONICS
- Manufacturer Part No:
- STPSC10H065G-TR
- Order Code:
- 2376463
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- Technical Datasheet:
- STPSC10H065G-TR Datasheet
- ECAD / MCAD
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Product Range Selector (650V)
See all from this product rangeProduct Overview
The STPSC10H065G-TR is a Power Schottky Silicon Carbide Diode features ultra high performance. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is especially suited for use in PFC applications and this ST SiC diode will boost the performance in hard switching conditions. Its high forward surge capability ensures a good robustness during transient phases.
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
Applications
Industrial
Product Information
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- :
- 650V
- :
- Single
- :
- 650V
- :
- 10A
- :
- 28.5nC
- :
- TO-263 (D2PAK)
- :
- 3 Pin
- :
- 175°C
- :
- Surface Mount
- :
- -
Technical Documents (2)
Packaging type
Cut Tape
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Extra stock is available upon order to the Supplier Lead Time which is approximately 5/26/25
1,948 deliver in 3-4 business days from our UK warehouse
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¥561.17
(
¥617.29
Inc. JCT)
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| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
|---|---|---|
| 1+ | ¥561.17 (¥617.29) | ( ) |
| 10+ | ¥388.74 (¥427.61) | ( ) |
| 100+ | ¥283.97 (¥312.37) | ( ) |
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