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STMICROELECTRONICS SCTL90N65G2V
Silicon Carbide MOSFET, Single, N Channel, 40 A, 650 V, 0.018 ohm, PowerFLAT
- Manufacturer:
- STMICROELECTRONICS STMICROELECTRONICS
- Manufacturer Part No:
- SCTL90N65G2V
- Order Code:
- 3748721
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- Technical Datasheet:
- SCTL90N65G2V Datasheet
- ECAD / MCAD
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Product Overview
SCTL90N65G2V is a silicon carbide power MOSFET. This silicon carbide power MOSFET device has been developed using ST’s advanced and innovative 2nd generation SiC MOSFET technology. The device features remarkably low on-resistance per unit area and very good switching performance. The variation of switching loss is almost independent of junction temperature. Typical applications are switching mode power supply, DC-DC converters, and industrial motor control.
- Very fast and robust intrinsic body diode, low capacitances
- Source sensing pin for increased efficiency
- Drain-source breakdown voltage is 650V minimum at VGS = 0V, ID = 1mA
- Static drain-source on-resistance is 24mohm max at VGS = 18V, ID = 40A
- Drain current (continuous) at TC = 25°C is 40A
- Input capacitance is 3380pF typical at VDS = 400V, f = 1MHz, VGS = 0V
- Rise time is 38ns typ at VDD = 400V, ID = 50A, RG = 2.2ohm, VGS = -5V to 18V
- PowerFLAT 8x8 HV package
- Operating junction temperature range from -55 to 175°C
Product Information
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- :
- Single
- :
- N Channel
- :
- 40A
- :
- 650V
- :
- 0.018ohm
- :
- PowerFLAT
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- 5Pins
- :
- 18V
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- 3.2V
- :
- 935W
- :
- 175°C
- :
- -
- :
- MSL 3 - 168 hours
Technical Documents (2)
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¥4,456.41
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¥4,902.05
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| 5+ | ¥4,247.62 (¥4,672.38) | ( ) |
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