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ONSEMI NVHL020N090SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 118 A, 900 V, 0.02 ohm, TO-247
- Manufacturer:
- ONSEMI ONSEMI
- Manufacturer Part No:
- NVHL020N090SC1
- Order Code:
- 3367865
-
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- Technical Datasheet:
- NVHL020N090SC1 Datasheet
- ECAD / MCAD
-
Product Range Selector (EliteSiC Series)
See all from this product rangeProduct Overview
NVHL020N090SC1 is a silicon carbide (SiC) MOSFET.
- 100% UIL tested, AEC-Q101 qualified and PPAP capable
- Drain-to-source on resistance is 20mohm typical at (VGS = 15V, ID = 60A, TJ = 25°C)
- Total gate charge is 196nC typical at (VGS = -5/15V, VDS = 720V, ID = 60A)
- Output capacitance is 296pF typical at (VGS = 0V, f = 1MHz, VDS = 450V)
- Gate resistance is 1.6 ohm typical at (f = 1MHz, TJ = 25°C)
- Turn-on delay time is 40ns typical at (VGS = -5/15V, VDS = 720V, ID = 60A, RG = 2.5 ohm)
- Rise time is 63ns typical at (VGS = -5/15V, VDS = 720V, ID = 60A, RG = 2.5 ohm)
- Drain-to-source breakdown voltage is 900V minimum at (VGS = 0V, ID = 1mA)
- Junction temperature range from -55°C to +175°C
- 3-lead TO-247 package
Product Information
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- :
- Single
- :
- N Channel
- :
- 118A
- :
- 900V
- :
- 0.02ohm
- :
- TO-247
- :
- 3Pins
- :
- 15V
- :
- 2.7V
- :
- 503W
- :
- 175°C
- :
- EliteSiC Series
Technical Documents (2)
Available for back order
More stock available to supplier lead times which is approximately 6/16/25
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¥3,936.00
(
¥4,329.60
Inc. JCT)
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| 1+ | ¥3,936.00 (¥4,329.60) | ( ) |
| 5+ | ¥3,894.34 (¥4,283.77) | ( ) |
| 10+ | ¥3,860.79 (¥4,246.87) | ( ) |
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