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ONSEMI NVMFD5C446NLT1G
Dual MOSFET, N Channel, 40 V, 40 V, 145 A, 145 A, 0.0022 ohm
- Manufacturer:
- ONSEMI ONSEMI
- Manufacturer Part No:
- NVMFD5C446NLT1G
- Order Code:
- 2835598
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- Technical Datasheet:
- NVMFD5C446NLT1G Datasheet
- ECAD / MCAD
-
Product Overview
NVMFD5C446NLT1G is a dual N-channel power MOSFET. It has low RDS(on) to minimize conduction losses and low QG and capacitance to minimize driver losses.
- AEC-Q101 qualified and PPAP capable
- Drain-to-source breakdown voltage is 40V minimum at (VGS = 0V, ID = 250µA)
- Gate-to-source leakage current is 100nA maximum at (VDS = 0V, VGS = 20V)
- Negative threshold temperature coefficient is -5.2mV/°C typical at (TJ = 25°C)
- Drain-to-source on resistance is 2.2mohm typical at (VGS = 10V, ID = 20A)
- Input capacitance is 3170pF typical at (VGS = 0V, f = 1MHz, VDS = 25V)
- Gate-to-drain charge is 7nC typical at (VGS = 4.5V, VDS = 32V; ID = 50A)
- Turn-on delay time is 14.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Rise time is 16.8ns typical at (VGS = 4.5V, VDS = 32V, ID = 5A, RG = 1 ohm)
- Junction temperature range from -55°C to +175°C, DFN8 package
Product Information
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- :
- N Channel
- :
- 40V
- :
- 40V
- :
- 145A
- :
- 145A
- :
- 0.0022ohm
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- 0.0022ohm
- :
- DFN
- :
- 8Pins
- :
- 125W
- :
- 125W
- :
- 175°C
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- -
- :
- -
- :
- MSL 1 - Unlimited
Technical Documents (1)
Packaging type
Cut Tape
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3,656 deliver in 3-4 business days from our UK warehouse
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¥578.81
(
¥636.69
Inc. JCT)
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