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ONSEMI NTHL080N120SC1A
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247
- Manufacturer:
- ONSEMI ONSEMI
- Manufacturer Part No:
- NTHL080N120SC1A
- Order Code:
- 3528502
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- Technical Datasheet:
- NTHL080N120SC1A Datasheet
- ECAD / MCAD
-
Product Range Selector (EliteSiC Series)
See all from this product rangeProduct Overview
NTHL080N120SC1A is an EliteSiC, 80mohm, 1200V, M1, silicon carbide (SiC) MOSFET. The applications include a UPS, DC-DC converter, and boost inverter.
- 100% UIL tested
- Drain-to-source on resistance is 80mohm typ (VGS = 20 V, ID = 20 A, TJ = 25°C)
- Total gate charge is 56nC typ (VGS = -5/20V, VDS = 600V, ID = 20A)
- Output capacitance is 80pF typ (VGS = 0V, f = 1MHz, VDS = 800V)
- Continuous drain-to-source diode forward current is 18A max (VGS = -5V, TJ = 25°C)
- Power dissipation is 178W (TC = 25°C), pulsed drain current is 132A (TA = 25°C)
- Gate resistance is 1.7ohm typ (f = 1MHz)
- Turn-on delay time is 13ns typ (VGS = -5/20V, VDS = 800V, ID = 20A, RG = 4.7, inductive load)
- Total switching loss is 311µJ typ (VGS = -5/20V, VDS = 800V, ID = 20A, RG = 4.7, inductive load)
- TO-247-3LD package, operating junction temperature range from -55 to +175°C
Warnings
Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.
Product Information
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- :
- Single
- :
- N Channel
- :
- 31A
- :
- 1.2kV
- :
- 0.08ohm
- :
- TO-247
- :
- 3Pins
- :
- 20V
- :
- 2.7V
- :
- 178W
- :
- 175°C
- :
- EliteSiC Series
- :
- MSL 1 - Unlimited
Technical Documents (2)
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592 deliver in 3-4 business days from our UK warehouse :(UK stock) Order before 17:00 Mon-Fri (excluding National Holidays)
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Extra stock is available upon order to the Supplier Lead Time which is approximately 6/16/25
592 deliver in 3-4 business days from our UK warehouse
Due to market conditions delivery times are for general guidance only and may be subject to change at short notice
¥1,736.79
(
¥1,910.47
Inc. JCT)
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| 5+ | ¥1,430.35 (¥1,573.39) | ( ) |
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