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ONSEMI HGT1S10N120BNST

IGBT, 35 A, 2.45 V, 298 W, 1.2 kV, TO-263AB, 3 Pins

ONSEMI HGT1S10N120BNST

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Manufacturer:
ONSEMI ONSEMI
Manufacturer Part No:
HGT1S10N120BNST
Order Code:
2454176
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Technical Datasheet:
HGT1S10N120BNST   Datasheet
ECAD / MCAD
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Product Overview

The HGT1S10N120BNST is a N-channel Non-punch Through (NPT) IGBT ideal for many high voltage switching applications operating at moderate frequencies where low conduction losses are essential, such as UPS and solar inverter. It is new member of the MOS gated high voltage switching IGBT family. It combines the best features of MOSFETs and bipolar transistors. This device has the high input impedance of a MOSFET and the low ON-state conduction loss of a bipolar transistor.
  • Short-circuit rating
  • Avalanche rated
  • 2.45V @ IC = 10A Low saturation voltage
  • 140ns Fall time @ TJ = 150°C
  • 298W Total power dissipation @ TC = 25°C

Applications

Power Management, Motor Drive & Control

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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TO-263AB

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Surface Mount

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Technical Documents (4)

Packaging type Cut Tape

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Deliveries start from 3/11/25

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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¥755.54 ( ¥831.09  Inc. JCT)

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