Silicon Carbide (SiC) MOSFETs & Modules
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Manufacturer Part No | Order Code | Description / Manufacturer | Availability | Price For |
Price (Incl JCT)
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Quantity | MOSFET Module Configuration | Channel Type | Continuous Drain Current Id | Drain Source Voltage Vds | Drain Source On State Resistance | Transistor Case Style | No. of Pins | Rds(on) Test Voltage | Gate Source Threshold Voltage Max | Power Dissipation | Operating Temperature Max | Product Range | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
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NTHL080N120SC1A
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3528502 |
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 31 A, 1.2 kV, 0.08 ohm, TO-247 ONSEMI
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1+ ¥1,736.79 (¥1,910.47) 5+ ¥1,430.35 (¥1,573.39) 10+ ¥1,412.74 (¥1,554.01) |
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Single | N Channel | 31A | 1.2kV | 0.08ohm | TO-247 | 3Pins | 20V | 2.7V | 178W | 175°C | EliteSiC Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM400C12P3G202
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3573227 |
Silicon Carbide MOSFET, Chopper, N Channel, 400 A, 1.2 kV, Module ROHM
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1+ ¥161,101.28 (¥177,211.41) |
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Chopper | N Channel | 400A | 1.2kV | - | Module | - | - | 5.6V | 1.57kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCTW70N120G2V
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3577228 |
Silicon Carbide MOSFET, Single, N Channel, 91 A, 1.2 kV, 0.021 ohm, HiP247 STMICROELECTRONICS
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1+ ¥6,293.35 (¥6,922.69) 5+ ¥5,828.08 (¥6,410.89) 10+ ¥5,363.93 (¥5,900.32) 50+ ¥5,350.57 (¥5,885.63) 100+ ¥5,204.76 (¥5,725.24) |
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Single | N Channel | 91A | 1.2kV | 0.021ohm | HiP247 | 3Pins | 18V | 2.45V | 547W | 200°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R030M1HXTMA1
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3582461 |
Silicon Carbide MOSFET, Single, N Channel, 56 A, 1.2 kV, 0.041 ohm, TO-263 (D2PAK) INFINEON
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1+ ¥4,484.13 (¥4,932.54) 5+ ¥3,923.61 (¥4,315.97) 10+ ¥3,251.00 (¥3,576.10) 50+ ¥2,914.69 (¥3,206.16) 100+ ¥2,690.48 (¥2,959.53) 250+ ¥2,511.11 (¥2,762.22) More Pricing... |
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Single | N Channel | 56A | 1.2kV | 0.041ohm | TO-263 (D2PAK) | 7Pins | 18V | 5.7V | 300W | 175°C | CoolSiC Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM180D12P2E002
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3573220 |
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 204 A, 1.2 kV, Module ROHM
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1+ ¥118,886.70 (¥130,775.37) |
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Half Bridge | Dual N Channel | 204A | 1.2kV | - | Module | - | - | 4V | 1.36kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM180C12P3C202
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3573219 |
Silicon Carbide MOSFET, Chopper, N Channel, 180 A, 1.2 kV, Module ROHM
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1+ ¥86,625.27 (¥95,287.80) |
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Chopper | N Channel | 180A | 1.2kV | - | Module | - | - | 5.6V | 880W | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMBG120R350M1HXTMA1
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3582467 |
Silicon Carbide MOSFET, Single, N Channel, 4.7 A, 1.2 kV, 0.35 ohm, TO-263 (D2PAK) INFINEON
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1+ ¥805.70 (¥886.27) 10+ ¥572.14 (¥629.35) 100+ ¥534.08 (¥587.49) 500+ ¥496.02 (¥545.62) 1000+ ¥457.96 (¥503.76) |
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Single | N Channel | 4.7A | 1.2kV | 0.35ohm | TO-263 (D2PAK) | 7Pins | 18V | 4.5V | 65W | 175°C | CoolSiC | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCTH70N120G2V-7
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3748720 |
Silicon Carbide MOSFET, Single, N Channel, 90 A, 1.2 kV, 0.021 ohm, H2PAK STMICROELECTRONICS
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1+ ¥5,025.55 (¥5,528.11) 5+ ¥4,853.02 (¥5,338.32) 10+ ¥4,678.27 (¥5,146.10) 50+ ¥4,504.63 (¥4,955.09) 100+ ¥4,330.99 (¥4,764.09) |
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Single | N Channel | 90A | 1.2kV | 0.021ohm | H2PAK | 7Pins | 18V | 2.45V | 469W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM250D17P2E004
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3573222 |
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 250 A, 1.7 kV, Module ROHM
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1+ ¥174,299.04 (¥191,728.94) |
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Half Bridge | Dual N Channel | 250A | 1.7kV | - | Module | - | - | 4V | 1.8kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM400D12P3G002
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3573231 |
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module ROHM
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1+ ¥219,202.82 (¥241,123.10) |
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Half Bridge | Dual N Channel | 400A | 1.2kV | - | Module | - | - | 5.6V | 1.57kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
IMZA65R107M1HXKSA1
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3500952 |
Silicon Carbide MOSFET, Single, N Channel, 20 A, 650 V, 0.107 ohm, TO-247 INFINEON
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1+ ¥1,223.28 (¥1,345.61) 5+ ¥1,098.61 (¥1,208.47) 10+ ¥975.06 (¥1,072.57) 50+ ¥926.09 (¥1,018.70) 100+ ¥876.00 (¥963.60) 250+ ¥782.50 (¥860.75) More Pricing... |
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Single | N Channel | 20A | 650V | 0.107ohm | TO-247 | 4Pins | 18V | 4.5V | 75W | 150°C | CoolSiC M1 | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCT3120AW7TL
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3577902 |
Silicon Carbide MOSFET, Single, N Channel, 21 A, 650 V, 0.12 ohm, TO-263 (D2PAK) ROHM
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1+ ¥1,551.64 (¥1,706.80) 10+ ¥1,367.98 (¥1,504.78) 25+ ¥1,347.94 (¥1,482.73) 50+ ¥1,306.76 (¥1,437.44) 100+ ¥1,183.21 (¥1,301.53) 250+ ¥1,163.17 (¥1,279.49) 500+ ¥1,135.34 (¥1,248.87) More Pricing... |
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Single | N Channel | 21A | 650V | 0.12ohm | TO-263 (D2PAK) | 7Pins | 18V | 5.6V | 100W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM400D12P2G003
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3573228 |
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 400 A, 1.2 kV, Module ROHM
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1+ ¥377,284.32 (¥415,012.75) |
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Half Bridge | Dual N Channel | 400A | 1.2kV | - | Module | - | - | 4V | 2.45kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
CAB400M12XM3
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3267940 |
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 395 A, 1.2 kV, 0.004 ohm, Module WOLFSPEED
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1+ ¥146,288.45 (¥160,917.30) |
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Half Bridge | Dual N Channel | 395A | 1.2kV | 0.004ohm | Module | - | 15V | 2.5V | - | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCT3030ALGC11
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2678783 |
Silicon Carbide Power MOSFET, N Channel, 70 A, 650 V, 0.03 ohm, 18 V, 5.6 V ROHM
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1+ ¥5,425.52 (¥5,968.07) 5+ ¥4,747.33 (¥5,222.06) 10+ ¥3,933.50 (¥4,326.85) 50+ ¥3,847.23 (¥4,231.95) |
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Single | N Channel | 70A | 650V | 0.03ohm | TO-247N | 3Pins | 18V | 5.6V | 262W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NVH4L160N120SC1
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3464025 |
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 17.3 A, 1.2 kV, 0.16 ohm, TO-247 ONSEMI
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1+ ¥1,125.33 (¥1,237.86) 5+ ¥1,093.05 (¥1,202.36) 10+ ¥1,059.65 (¥1,165.62) 50+ ¥1,059.65 (¥1,165.62) |
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Single | N Channel | 17.3A | 1.2kV | 0.16ohm | TO-247 | 4Pins | 20V | 3.1V | 111W | 175°C | EliteSiC Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTBG080N120SC1
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3528496 |
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 30 A, 1.2 kV, 0.08 ohm, TO-263HV (D2PAK) ONSEMI
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1+ ¥1,528.26 (¥1,681.09) 10+ ¥1,364.64 (¥1,501.10) 100+ ¥1,227.73 (¥1,350.50) 500+ ¥1,212.15 (¥1,333.37) 800+ ¥1,137.57 (¥1,251.33) 1600+ ¥1,116.42 (¥1,228.06) 2400+ ¥1,093.05 (¥1,202.36) More Pricing... |
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Single | N Channel | 30A | 1.2kV | 0.08ohm | TO-263HV (D2PAK) | 7Pins | 20V | 3V | 179W | 175°C | EliteSiC Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
NTH4L080N120SC1
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3464005 |
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 29 A, 1.2 kV, 0.08 ohm, TO-247 ONSEMI
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1+ ¥1,370.33 (¥1,507.36) |
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Single | N Channel | 29A | 1.2kV | 0.08ohm | TO-247 | 4Pins | 20V | 2.75V | 170W | 175°C | EliteSiC Series | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCTH35N65G2V-7
|
3387271 |
Silicon Carbide MOSFET, Single, N Channel, 45 A, 650 V, 0.045 ohm, H2PAK STMICROELECTRONICS
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1+ ¥2,171.62 (¥2,388.78) 5+ ¥2,016.90 (¥2,218.59) 10+ ¥1,861.07 (¥2,047.18) 50+ ¥1,758.67 (¥1,934.54) 100+ ¥1,655.15 (¥1,820.67) 250+ ¥1,603.95 (¥1,764.35) More Pricing... |
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Single | N Channel | 45A | 650V | 0.045ohm | H2PAK | 7Pins | 20V | 3.2V | 208W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
MD15FSR120L2SF
|
3549208 |
Silicon Carbide MOSFET, Half Bridge, Six N Channel, 25 A, 1.2 kV, 0.08 ohm, Module STARPOWER
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1+ ¥19,894.04 (¥21,883.44) 5+ ¥18,336.84 (¥20,170.52) 10+ ¥17,496.47 (¥19,246.12) 50+ ¥16,976.66 (¥18,674.33) |
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Half Bridge | Six N Channel | 25A | 1.2kV | 0.08ohm | Module | 23Pins | 18V | 5.6V | 101W | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCTH60N120G2-7
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3806244 |
Silicon Carbide MOSFET, Single, N Channel, 60 A, 1.2 kV, 0.035 ohm, H2PAK STMICROELECTRONICS
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1+ ¥4,631.95 (¥5,095.15) 5+ ¥4,303.30 (¥4,733.63) 10+ ¥3,973.42 (¥4,370.76) 50+ ¥3,788.10 (¥4,166.91) 100+ ¥3,600.30 (¥3,960.33) |
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Single | N Channel | 60A | 1.2kV | 0.035ohm | H2PAK | 7Pins | 18V | 3V | 390W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
G3R160MT12J
|
3598649 |
Silicon Carbide MOSFET, Single, N Channel, 22 A, 1.2 kV, 0.16 ohm, TO-263 (D2PAK) GENESIC SEMICONDUCTOR
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1+ ¥1,136.44 (¥1,250.08) 5+ ¥1,093.81 (¥1,203.19) |
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Single | N Channel | 22A | 1.2kV | 0.16ohm | TO-263 (D2PAK) | 7Pins | 15V | 2.69V | 128W | 175°C | G3R | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM180C12P2E202
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3573218 |
Silicon Carbide MOSFET, Chopper, N Channel, 204 A, 1.2 kV, Module ROHM
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1+ ¥100,608.86 (¥110,669.75) |
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Chopper | N Channel | 204A | 1.2kV | - | Module | - | - | 4V | 1.36kW | 150°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
SCT3080AW7TL
|
3577901 |
Silicon Carbide MOSFET, Single, N Channel, 29 A, 650 V, 0.08 ohm, TO-263 (D2PAK) ROHM
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1+ ¥2,153.75 (¥2,369.13) 5+ ¥1,863.76 (¥2,050.14) 10+ ¥1,573.77 (¥1,731.15) 50+ ¥1,568.28 (¥1,725.11) |
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Single | N Channel | 29A | 650V | 0.08ohm | TO-263 (D2PAK) | 7Pins | 18V | 5.6V | 125W | 175°C | - | |||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||||
BSM600C12P3G201
|
3573232 |
Silicon Carbide MOSFET, Chopper, N Channel, 600 A, 1.2 kV, Module ROHM
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1+ ¥211,279.93 (¥232,407.92) |
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Chopper | N Channel | 600A | 1.2kV | - | Module | - | - | 5.6V | 2.46kW | 150°C | - |