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ANALOG DEVICES HMC414MS8GE

RF Amplifier, 0Hz to 6GHz, 16 dB Gain, SOT-89-4, -40 °C to 85 °C

ANALOG DEVICES HMC414MS8GE

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Manufacturer Part No:
HMC414MS8GE
Order Code:
4030287
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Technical Datasheet:
HMC414MS8GE   Datasheet
ECAD / MCAD
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Product Overview

HMC414MS8GE is a high efficiency GaAs InGaP heterojunction bipolar transistor (HBT) MMIC power amplifier which operate between 2.2 and 2.8GHz. The amplifier is packaged in a low cost, surface mount 8 leaded package with an exposed base for improved RF and thermal performance. With a minimum of external components, the amplifier provides 20dB of gain, +30dBm of saturated power at 32% PAE from a +5V supply voltage. The amplifier can also operate with a 3.6V supply. Vpd can be used for full power down or RF output power/current control. This amplifier is ideal for use as a power amplifier for 2.2 to 2.7GHz applications BLUETOOTH, MMDS.
  • Power down capability, low external part count
  • Frequency range from 2.2 to 2.8GHz (Vs = 3.6V, TA = +25°C)
  • Gain is 20dB (typ, Vs = 3.6V, TA = +25°C)
  • Gain variation over temperature is 0.03dB / °C (typ, Vs = 3.6V, TA = +25°C)
  • Input return loss is 8dB (typ, Vs = 3.6V, TA = +25°C)
  • Output return loss is 9dB and noise figure is 6.5dB (typ, Vs = 3.6V, TA = +25°C)
  • Output power for 1dB compression (P1dB) is 25dBm (typ, Vs = 3.6V, TA = +25°C)
  • Saturated output power is 27dBm (typ, Vs = 3.6V, TA = +25°C)
  • Output third order intercept is 35dBm (typ, Vs = 3.6V, TA = +25°C)
  • 8 pin MSOP-EP package, operating temperature range from -40 to +85°C

Footnotes

ADI products are only authorized (and sold) for use by the customer and are not to be resold or otherwise passed on to any third party

Product Information

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:
2.2GHz

:
2.8GHz

:
20dB

:
7dB

:
MSOP-EP

:
8Pins

:
2.75V

:
5V

:
-40°C

:
85°C

:
-

:
-

:
MSL 1 - Unlimited

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Technical Documents (1)

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¥2,150.61 ( ¥2,365.67  Inc. JCT)

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