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WOLFSPEED C3M0016120K

Silicon Carbide MOSFET, Single, N Channel, 115 A, 1.2 kV, 0.0223 ohm, TO-247

WOLFSPEED C3M0016120K

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Manufacturer:
WOLFSPEED WOLFSPEED
Manufacturer Part No:
C3M0016120K
Order Code:
3212276
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Technical Datasheet:
C3M0016120K   Datasheet
ECAD / MCAD
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Product Overview

C3M0016120K is a C3M™MOSFET technology N-Channel enhancement mode silicon carbide power MOSFET. Application includes solar inverters, EV motor drive, high voltage DC/DC converters, switched mode power supplies, load switch.
  • 3rd generation SiC MOSFET technology, optimized package with separate driver source pin
  • 0.31inch of creepage distance between drain and source, high blocking voltage with low on-resistance
  • High-speed switching with low capacitances, fast intrinsic diode with low reverse recovery (Qrr)
  • Reduce switching losses and minimize gate ringing, higher system efficiency
  • Reduce cooling requirements, increase power density
  • Increase system switching frequency
  • 1200V drain - source voltage (VGS = 0V, ID = 100μA)
  • 115A continuous drain current (VGS = 15V, TC = 25˚C)
  • 16mohm drain-source on-state resistance (VGS = 15V, ID = 75A)
  • TO 247-4 package, operating junction and storage temperature range from -40 to +175˚C

Product Information

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:
Single

:
N Channel

:
115A

:
1.2kV

:
0.0223ohm

:
TO-247

:
4Pins

:
15V

:
3.6V

:
556W

:
175°C

:
C3M

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Technical Documents (2)

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