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WEEN SEMICONDUCTORS NXPSC08650BJ

Silicon Carbide Schottky Diode, Single, 650 V, 8 A, TO-263 (D2PAK)

WEEN SEMICONDUCTORS NXPSC08650BJ

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Manufacturer Part No:
NXPSC08650BJ
Order Code:
2902398
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Technical Datasheet:
NXPSC08650BJ   Datasheet
ECAD / MCAD
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Product Overview

NXPSC08650BJ is a silicon carbide diode. This is designed for high frequency switched-mode power supplies. Applications include power factor correction, telecom / server SMPS, UPS, PV inverter, PC silver box, LED / OLED TV, motor drives.
  • Highly stable switching performance, high forward surge capability IFSM
  • Extremely fast reverse recovery time, superior in efficiency to silicon diode alternatives
  • Reduced losses in associated MOSFET, reduced EMI
  • Reduced cooling requirements
  • 1.5V typical forward voltage (IF = 8A, Tj= 25°C)
  • 13nC typical recovered charge (IF = 8A, dIF/dt = 500A/μs, VR = 400V, Tj= 25°C)
  • 650V max repetitive peak reverse voltage
  • 8A max average forward current (δ = 0.5, square-wave pulse, Tmb ≤ 112°C)
  • 3 pin TO263 package, 175°C junction temperature

Product Information

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-

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Single

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650V

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8A

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-

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TO-263 (D2PAK)

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3 Pin

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175°C

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Surface Mount

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-

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Technical Documents (1)

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¥766.92 ( ¥843.61  Inc. JCT)

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