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TOSHIBA TTC5200(Q)      

Bipolar (BJT) Single Transistor, NPN, 230 V, 15 A, 150 W, TO-3PL, Through Hole

TOSHIBA TTC5200(Q)      

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Manufacturer:
TOSHIBA TOSHIBA
Manufacturer Part No:
TTC5200(Q)      
Order Code:
1901957
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Product Range
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ECAD / MCAD
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Product Overview

The TTC5200 from Toshiba is a through hole NPN silicon transistor in TO-3P package with high collector voltage. This device is commonly used for power amplification.
  • Collector to emitter voltage (Vce) is 230V
  • Collector to base voltage of 230V
  • Collector current (Ic) is 15A
  • Power dissipation (pd) is 150W
  • Junction temperature of 150°C
  • Current gain of 35 at 7A collector current
  • Collector to emitter saturation voltage of 3V
  • Collector to emitter breakdown voltage of 230V

Applications

Signal Processing, Power Management, Portable Devices, Consumer Electronics, Industrial

Product Information

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NPN

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230V

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15A

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150W

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TO-3PL

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Through Hole

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3Pins

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30MHz

:
80hFE

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150°C

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-

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-

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-

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Technical Documents (1)

Available for back order

More stock available to supplier lead times which is approximately 6/2/25

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

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¥511.01 ( ¥562.11  Inc. JCT)

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