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STMICROELECTRONICS VNS3NV04DPTR-E

Power Load Distribution Switch, Low Side, 2 Outputs, 2 Channels, 5 A, SOIC-8

STMICROELECTRONICS VNS3NV04DPTR-E

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Manufacturer Part No:
VNS3NV04DPTR-E
Order Code:
2762749
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Technical Datasheet:
VNS3NV04DPTR-E   Datasheet
ECAD / MCAD
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Product Overview

VNS3NV04DPTR-E is an automotive OMNIFET II fully auto protected power MOSFET. It is made up of two monolithic chips (OMNIFET II) housed in a standard package. The OMNIFET II is designed using STMicroelectronics VI Power M0-3 technology and is intended for replacement of standard power MOSFET in up to 50kHz DC applications. Built-in thermal shutdown, linear current limitation and overvoltage clamp protect the chip in harsh environments. Fault feedback can be detected by monitoring voltage at the input pin.
  • AEC-Q100 qualified, linear current limitation
  • Thermal shutdown, short-circuit protection, integrated clamp
  • Low current drawn from input pin
  • Diagnostic feedback through input pin, ESD protection
  • Direct access to the gate of the power MOSFET (analogue driving)
  • Compatible with standard Power MOSFET
  • Static drain-source on resistance is 120mohm max (VIN = 5V; ID = 1.5A; Tj = 25°C)
  • Drain current limit is 5A typ (VIN = 5V; VDS = 13V, -40°C Tj 150°C)
  • Drain-source clamp voltage is 45V typ (VIN = 0V, ID = 1.5A, -40°C Tj 150°C)
  • SO-8 package, operating temperature range from -40°C to 150°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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:
Low Side

:
2Channels

:
-

:
5A

:
0.12ohm

:
SOIC

:
8Pins

:
Yes

:
-

:
2Outputs

:
-40°C

:
150°C

:
-

:
-

:
MSL 3 - 168 hours

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Technical Documents (2)

Packaging type Cut Tape

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37,981 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥405.99 ( ¥446.59  Inc. JCT)

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