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STMICROELECTRONICS STPSC12065D
Silicon Carbide Schottky Diode, Single, 650 V, 12 A, 36 nC, TO-220AC
- Manufacturer:
- STMICROELECTRONICS STMICROELECTRONICS
- Manufacturer Part No:
- STPSC12065D
- Order Code:
- 3397857
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- Technical Datasheet:
- STPSC12065D Datasheet
- ECAD / MCAD
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Product Overview
STPSC12065D is a 650V, 12A power Schottky silicon carbide diode in a 2 pin TO-220AC package. The SiC diode is an ultra high performance power Schottky diode. It is manufactured using a silicon carbide substrate. The wide band gap material allows the design of a Schottky diode structure with a 650V rating. Due to the Schottky construction, no recovery is shown at turn-off and ringing patterns are negligible. The minimal capacitive turn-off behaviour is independent of temperature. It is used in DC/DC converter, high frequency inverter, snubber and boost PFC function.
- Forward voltage drop of 1.30V at IF = 12A
- Maximum operating junction temperature of 175°C
- No or negligible reverse recovery
- Switching behaviour independent of temperature
- High forward surge capability
- D²PAK HV creepage distance (anode to cathode) = 5.38mm min
- ECOPACK2 compliant
- Power efficient
Product Information
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- Single
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- 650V
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- 12A
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- 36nC
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- TO-220AC
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- 2 Pin
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- 175°C
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- Through Hole
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Technical Documents (2)
Available for back order
More stock available to supplier lead times which is approximately 5/26/25
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¥534.52
(
¥587.97
Inc. JCT)
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| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
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| 1+ | ¥534.52 (¥587.97) | ( ) |
| 10+ | ¥382.47 (¥420.72) | ( ) |
| 100+ | ¥289.99 (¥318.99) | ( ) |
| 500+ | ¥261.78 (¥287.96) | ( ) |
| 1000+ | ¥252.66 (¥277.93) | ( ) |
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