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STMICROELECTRONICS STGYA120M65DF2AG

IGBT, 160 A, 1.65 V, 625 W, 650 V, MAX-247, 3 Pins

STMICROELECTRONICS STGYA120M65DF2AG
STMICROELECTRONICS STGYA120M65DF2AG

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Manufacturer Part No:
STGYA120M65DF2AG
Order Code:
2729674
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Technical Datasheet:
STGYA120M65DF2AG   Datasheet
ECAD / MCAD
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Product Overview

STGYA120M65DF2AG is an automotive-grade trench gate field-stop, M series IGBT. This IGBT developed using an advanced proprietary trench gate fieldstop structure. The device is part of the M series IGBTs, which represent an optimal balance between inverter system performance and efficiency where the low-loss and the short-circuit functionality is essential. Furthermore, the positive VCE(sat) temperature coefficient and the tight parameter distribution result in safer paralleling operation. Typical applications include applications, heating system, HV battery disconnect and fire-off system and main inverter (electric traction).
  • AEC-Q101 qualified
  • 6µs of short-circuit withstand time
  • VCE(sat) = 1.65 V (typ.) at IC = 120 A
  • Tight parameter distribution
  • Safer paralleling
  • Positive VCE(sat) temperature coefficient
  • Low thermal resistance
  • Max247 long leads package
  • Soft and very fast recovery antiparallel diode
  • Maximum junction temperature TJ is 175°C

Warnings

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts

Product Information

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:
160A

:
1.65V

:
625W

:
650V

:
MAX-247

:
3Pins

:
175°C

:
Through Hole

:
M

:
-

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Technical Documents (2)

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223 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥1,343.35 ( ¥1,477.69  Inc. JCT)

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