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ROHM BSM180D12P3C007
Silicon Carbide MOSFET, Half Bridge, Dual N Channel, 180 A, 1.2 kV, Module
- Manufacturer:
- ROHM ROHM
- Manufacturer Part No:
- BSM180D12P3C007
- Order Code:
- 3573221
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- Technical Datasheet:
- BSM180D12P3C007 Datasheet
- ECAD / MCAD
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Product Overview
BSM180D12P3C007 is a SiC power module. This product is a chopper module consisting of SiC-UMOSFET and SiC-SBD from ROHM. Application includes motor drive, inverter, converter, photovoltaics, wind power generation, induction heating equipment.
- Low surge, low switching loss, high-speed switching possible
- Reduced temperature dependence
- 1.8V typical static drain-source on-state voltage (Tj=25°C, IC=180A, VGS=18V)
- 2µA maximum drain cut-off current (VDS=1200V, VGS=0V, Tj=25°C)
- Gate-source threshold voltage range from 2.7V to 5.6V (VDS=10V, ID=50mA, Tj=25°C)
- 9nF typical input capacitance (VDS=10V, VGS=0V, 100KHz, Tj=25°C)
- 50ns typ switching characteristics (Tj=25°C)
- 2500Vrms isolation voltage (terminals to baseplate, f=60Hz AC 1min)
- 1.4ohm typical gate resistance (Tj=25°C)
- Junction temperature range from -40°C to150°C
Product Information
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- Half Bridge
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- Dual N Channel
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- 180A
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- 1.2kV
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- -
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- Module
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- -
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- -
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- 5.6V
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- 880W
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- 150°C
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- -
Technical Documents (1)
Available for back order
More stock available to supplier lead times which is approximately 6/23/25
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You can reserve stock now just order your desired quantity and checkout as normal. The quantity that cant be dispatched now will be placed on back order and sent as soon as we get a delivery from our supplier. You only get charged when the products are dispatched to you.
Due to market conditions delivery times are for general guidance only and may be subject to change at short notice
¥105,150.20
(
¥115,665.22
Inc. JCT)
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| Quantity | Price (Incl JCT) | Your Price (Incl JCT) |
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| 1+ | ¥105,150.20 (¥115,665.22) | ( ) |
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