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RENESAS HFA3096BZ

Bipolar Transistor Array, Complementary NPN and PNP, 8 V, 8 V, 37 mA, 37 mA, 150 mW

RENESAS HFA3096BZ

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Manufacturer:
RENESAS RENESAS
Manufacturer Part No:
HFA3096BZ
Order Code:
1562039
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Technical Datasheet:
HFA3096BZ   Datasheet
ECAD / MCAD
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Product Overview

The HFA3096BZ is a NPN-PNP ultra-high frequency Bipolar Transistor Array consists of five dielectrically isolated transistors on a common monolithic substrate. The NPN transistors exhibit a fT of 8GHz while the PNP transistors provide a fT of 5.5GHz. Both types exhibit low noise (3.5dB), making them ideal for high frequency amplifier and mixer applications. Access is provided to each of the terminals for the individual transistors for maximum application flexibility. Monolithic construction of these transistor arrays provides close electrical and thermal matching of the five transistors.
  • 3.5dB Noise figure (50Ω) at 1GHz
  • 1pA Collector to collector leakage
  • Complete isolation between transistors

Applications

RF Communications, Sensing & Instrumentation, Industrial, Power Management

Footnotes

Market demand for this product has caused an extension in leadtimes. Delivery dates may fluctuate. Product exempt from discounts.

Product Information

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Complementary NPN and PNP

:
8V

:
8V

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37mA

:
37mA

:
150mW

:
150mW

:
130hFE

:
130hFE

:
SOIC

:
16Pins

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Surface Mount

:
125°C

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8GHz

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5.5GHz

:
-

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-

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MSL 3 - 168 hours

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Technical Documents (2)

2,550 In stock Need more?

2,550 deliver in 3-4 business days from our UK warehouse

Due to market conditions delivery times are for general guidance only and may be subject to change at short notice

¥1,816.21 (¥1,997.83 Inc. JCT)

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