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QORVO UF3SC120016K3S
Silicon Carbide MOSFET, Single, N Channel, 107 A, 1.2 kV, 0.016 ohm, TO-247
- Manufacturer:
- QORVO QORVO
- Manufacturer Part No:
- UF3SC120016K3S
- Order Code:
- 4014252
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- Technical Datasheet:
- UF3SC120016K3S Datasheet
- ECAD / MCAD
-
Product Overview
UF3SC120016K3S is a SiC FET device based on a unique ‘cascade’ circuit configuration, in which a normally-on SiC JFET is co-packaged with a Si MOSFET to produce a normally-off SiC FET device. The device’s standard gate-drive characteristics allows for a true “drop-in replacement” to Si IGBTs, Si FETs, SiC MOSFETs or Si super junction devices. Available in the TO-247-3L package, this device exhibits ultralow gate charge and exceptional reverse recovery characteristics, making it ideal for switching inductive loads when used with recommended RC-snubbers, and any application requiring standard gate drive. Typical applications are EV charging, PV inverters, switch mode power supplies, power factor correction modules, motor drives, induction heating.
- Typical on-resistance RDS(on) is 16mohm (VGS=12V, ID=50A, TJ=25°C)
- Maximum operating temperature of 175°C
- Excellent reverse recovery, low gate charge
- Low intrinsic capacitance, ESD protected, HBM class 2
- Very low switching losses (required RC-snubber loss negligible under typical operating conditions)
- Drain-source voltage is 1200V
- Continuous drain current is 107A at TC = 25°C
- Operating and storage temperature range from -55 to 175°C
- Pulsed drain current is 350A at TC = 25°C
- Power dissipation is 517W at TC = 25°C
Product Information
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- :
- Single
- :
- N Channel
- :
- 107A
- :
- 1.2kV
- :
- 0.016ohm
- :
- TO-247
- :
- 3Pins
- :
- 12V
- :
- 4.7V
- :
- 517W
- :
- 175°C
- :
- -
Technical Documents (1)
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910 deliver in 3-4 business days from our UK warehouse
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¥8,337.54
(
¥9,171.29
Inc. JCT)
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| 1+ | ¥8,337.54 (¥9,171.29) | ( ) |
| 5+ | ¥7,791.27 (¥8,570.40) | ( ) |
| 10+ | ¥7,613.55 (¥8,374.91) | ( ) |
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