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ONSEMI NVHL040N120SC1
Silicon Carbide MOSFET, EliteSiC, Single, N Channel, 60 A, 1.2 kV, 0.056 ohm, TO-247
- Manufacturer:
- ONSEMI ONSEMI
- Manufacturer Part No:
- NVHL040N120SC1
- Order Code:
- 3464026
-
-
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- Technical Datasheet:
- NVHL040N120SC1 Datasheet
- ECAD / MCAD
-
Product Range Selector (EliteSiC Series)
See all from this product rangeProduct Overview
- Silicon carbide (SiC) MOSFET
- 100% UIL tested, AEC-Q101 qualified and PPAP capable
- Drain-to-source on resistance is 39mohm (typ, VGS = 20V, ID = 35A, TJ = 25°C
- Reverse transfer capacitance is 12pF (typ, VGS = 0V, f = 1MHz, VDS = 800V)
- Continuous drain current RJC is 60A (maximum, TC = 25°C, steady state)
- Gate to source leakage current is ±1µA (max, VGS = +25/-15V, VDS =0V)
- Power dissipation is 348W (VGS = +25/-15V, VDS =0V)
- Rise time is 41ns (typ, VGS = -5/20V, VDS = 800V, ID = 47A, RG = 4.7ohm, inductive load)
- Reverse recovery time is 24ns (typ, VGS = -5/20V, ISD = 47A, dIS/dt = 1000A/ s)
- Operating and storage junction temperature range from -55 to +175°C, TO247-3L package
Product Information
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- :
- Single
- :
- N Channel
- :
- 60A
- :
- 1.2kV
- :
- 0.056ohm
- :
- TO-247
- :
- 3Pins
- :
- 20V
- :
- 4.3V
- :
- 348W
- :
- 175°C
- :
- EliteSiC Series
Technical Documents (2)
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¥4,697.33
(
¥5,167.06
Inc. JCT)
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| 1+ | ¥4,697.33 (¥5,167.06) | ( ) |
| 5+ | ¥4,110.16 (¥4,521.18) | ( ) |
| 10+ | ¥3,405.56 (¥3,746.12) | ( ) |
| 50+ | ¥3,053.26 (¥3,358.59) | ( ) |
| 100+ | ¥2,818.40 (¥3,100.24) | ( ) |
| 250+ | ¥2,630.50 (¥2,893.55) | ( ) |
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